This paper demonstrates the first beam resonators fabricated from bulk high purity semi-insulating 4H Silicon Carbide wafers (HPSI 4H-SiC). Our innovations include: (1) Multi-level front-side, back-side inductively coupled plasma-deep reactive ion etching (ICP-DRIE) technology to fabricate thin, low-mass, bending-mode resonators framed by the SiC substrate (2) Laser Doppler Vibrometer (LDV) measurements of mechanical quality factors (Q) > 10,000 with frequencies ranging from 300 kHz to 8MHz and (3) Calculated uniaxial in-plane surface stress 20 MPa at top surface of resonator base when operating at resonance in vacuum.
@article{arxiv.1911.08347,
title = {SiC Cantilevers For Generating Uniaxial Stress},
author = {Boyang Jiang and Noah Opondo and Gary Wolfowicz and Pen-Li Yu and David D. Awschalom and Sunil A. Bhave},
journal= {arXiv preprint arXiv:1911.08347},
year = {2019}
}
Comments
4 pages, 5 figures, 1 table. Conference paper for Transducers 2019