Silicon carbide (SiC) recently emerged as a promising photonic and quantum material owing to its unique material properties. Here, we carry out an exploratory investigation of the electro-optic effect in high-quality-factor 4H-SiC microresonators. Our findings confirm the existence of the Pockels effect in 4H-SiC for the first time. The extracted Pockels coefficients show certain variations among 4H-SiC wafers from different manufacturers, with the magnitudes of r13 and r33 estimated to be in the range of (0.3-0.7) pm/V and (0-0.03) pm/V, respectively.
@article{arxiv.2212.01914,
title = {Investigation of the electro-optic effect in high-$Q$ 4H-SiC microresonators},
author = {Ruixuan Wang and Jingwei Li and Lutong Cai and Qing Li},
journal= {arXiv preprint arXiv:2212.01914},
year = {2023}
}