Silicon rich nitride-lithium niobate on insulator platform for photonics integrated circuits
Abstract
In this paper, a silicon rich nitride-lithium niobate on insulator (SRN-LNOI) hybrid platform with waveguides and several key components is proposed. The propagation loss of the silicon rich nitride-lithium niobate rib-loaded waveguide (1 um x 300 nm) is 2.6 dB/cm at 1550 nm. Passive devices, including adiabatic power splitters, multimode interferometer based splitters, asymmetrical Mach-Zehnder interferometers and Bragg grating filters are fully designed and characterized. Moreover, we report the first demonstration of Mach-Zehnder modulators based on LNOI with high-speed modulation up to 120 GBaud without digital compensation. Hence, the proposed platform enables high performance passive and active devices with low loss, high integration density and complementary metal-oxide-semiconductor technology (CMOS) compatibility, making it a promising candidate for emerging photonics integrated circuits.
Keywords
Cite
@article{arxiv.2105.07880,
title = {Silicon rich nitride-lithium niobate on insulator platform for photonics integrated circuits},
author = {Yang Liu and Xingrui Huang and Zezheng Li and Huan Guan and Zhongchao Fan and Weihua Han and Zhiyong Li},
journal= {arXiv preprint arXiv:2105.07880},
year = {2024}
}
Comments
11 pages, 13 figures