Low-loss phononic integrated circuits based on a silicon nitride-lithium niobate platform
Abstract
Microwave-frequency acoustic waves in solids have emerged as a versatile platform for both classical and quantum applications. While phononic integrated devices and circuits are being developed on various material platforms, an ideal phononic integrated circuit (PnIC) platform should simultaneously support low-loss waveguide structures, high-quality-factor resonators, high-performance modulators, and efficient electromechanical transducers. Here, we establish a low-loss gigahertz-frequency PnIC platform based on patterned thin-film silicon nitride (SiN) on lithium niobate (LN) substrate. We develop low-loss PnIC building blocks including waveguides, directional couplers, and high-quality-factor (high-Q) ring resonators. As an application, we demonstrate a 1-GHz phononic oscillator based on a ring resonator, reaching a low phase noise of -159.0 dBc/Hz at a 100-kHz offset frequency. Our low-loss PnICs could meet the requirements in microwave acoustics, quantum phononics, and integrated hybrid systems combining phonons, photons, superconducting qubits, and solid-state defects.
Keywords
Cite
@article{arxiv.2603.27711,
title = {Low-loss phononic integrated circuits based on a silicon nitride-lithium niobate platform},
author = {Jun Ji and Joseph G Thomas and Zichen Xi and Ruxuan Liu and Kinson Fang and Yuan Qin and Andreas Beling and Xu Yi and Yizheng Zhu and Linbo Shao},
journal= {arXiv preprint arXiv:2603.27711},
year = {2026}
}