Lithium Niobate Michelson Interferometer Modulator on Silicon-On-Insulator Platform
Abstract
We propose and demonstrate a hybrid silicon and lithium niobate Michelson Interferometer Modulator (MIM) with enhanced modulation efficiency compared to a Mach-Zehnder modulator. The modulator is based on seamless integration of a high-contrast waveguide based on lithium niobate-a popular modulator material-with compact, low-loss silicon circuitry. The present device demonstrates a modulation efficiency as high as 1.2 Vcm and a low insertion loss of 3.3 dB. The 3dB electro-optic bandwidth is approximately 17.5 GHz. The optical eye diagrams, operating at 32 Gbit/s and 40 Gbit/s, with measured dynamic extinction ratios at 8 dB and 6.6 dB respectively. The present device avoids absorption loss and nonlinearity in conventional silicon modulators and demonstrates highest modulation efficiency in LN modulators, showing potential in future optical interconnects.
Cite
@article{arxiv.1905.01623,
title = {Lithium Niobate Michelson Interferometer Modulator on Silicon-On-Insulator Platform},
author = {Mengyue Xu and Wenjun Chen and Mingbo He and Xueqin Wen and Ziliang Ruan and Lifeng Chen and Liu Liu and Siyuan Yu and Xinlun Cai},
journal= {arXiv preprint arXiv:1905.01623},
year = {2020}
}
Comments
4 pages, 5 figures