Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator
Abstract
Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to well-established silicon ecosystem by easy "pick and place", which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous integrated circuits. Here, we demonstrated for the first time a micro-transfer-printed thin film lithium niobate (TFLN)-on-silicon ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with compact and scalable silicon circuity. The presented device exhibits an insertion loss of -1.5dB, extinction ratio of -37dB, electro-optical bandwidth of 16GHz and modulation rates up to 45Gps.
Keywords
Cite
@article{arxiv.2311.15387,
title = {Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator},
author = {Ying Tan and Shengpu Niu and Maximilien Billet and Nishant Singh and Margot Niels and Tom Vanackere and Joris Van Kerrebrouck and Gunther Roelkens and Bart Kuyken and Dries Van Thourhout},
journal= {arXiv preprint arXiv:2311.15387},
year = {2024}
}
Comments
8 figures,10 pages. ACS Photonics 2024