On-chip erbium-doped lithium niobate waveguide amplifiers
Optics
2021-07-28 v1 Applied Physics
Abstract
Lithium niobate on insulator (LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication on-chip erbium-doped LNOI waveguide amplifiers based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ~30 dB/cm in communication band was achieved in the fabricated waveguide amplifiers under the pump of a 974-nm continuous laser. This work develops new active devices on LNOI and will promote the development of LNOI integrated photonics.
Keywords
Cite
@article{arxiv.2103.15786,
title = {On-chip erbium-doped lithium niobate waveguide amplifiers},
author = {Qiang Luo and Chen Yang and Zhenzhong Hao and Ru Zhang and Dahuai Zheng and Fang Bo and Yongfa Kong and Guoquan Zhang and Jingjun Xu},
journal= {arXiv preprint arXiv:2103.15786},
year = {2021}
}
Comments
8 pages,4 figures