On-chip integrated waveguide amplifiers on Erbium-doped thin film lithium niobate on insulator
Optics
2021-01-05 v1 Applied Physics
Abstract
We demonstrate on-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin film lithium niobate on insulator (TFLNOI) using the photolithography assisted chemo-mechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB/cm. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.
Keywords
Cite
@article{arxiv.2101.00783,
title = {On-chip integrated waveguide amplifiers on Erbium-doped thin film lithium niobate on insulator},
author = {Junxia Zhou and Youting Liang and Zhaoxiang Liu and Wei Chu and Haisu Zhang and Difeng Yin and Zhiwei Fang and Rongbo Wu and Jianhao Zhang and Wei Chen and Zhe Wang and Yuan Zhou and Min Wang and Ya Cheng},
journal= {arXiv preprint arXiv:2101.00783},
year = {2021}
}
Comments
4 pages, 6 figures