Monolithic CMOS-compatible zero-index metamaterials
Abstract
Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We demonstrate a CMOS-compatible zero-index metamaterial consisting of a square array of air holes in a 220-nm-thick silicon-on-insulator (SOI) wafer. This design is achieved through a Dirac-cone dispersion. The metamaterial is entirely composed of silicon and offers compatibility through low-aspect-ratio structures that can be simply fabricated in a standard device layer. This platform enables mass adoption and exploration of zero-index-based photonic devices at low cost and high fidelity.
Keywords
Cite
@article{arxiv.1610.05368,
title = {Monolithic CMOS-compatible zero-index metamaterials},
author = {Daryl I. Vulis and Yang Li and Orad Reshef and Philip Camayd-Muñoz and Mei Yin and Shota Kita and Marko Lončar and Eric Mazur},
journal= {arXiv preprint arXiv:1610.05368},
year = {2017}
}
Comments
18 pages, 4 figures