Image sensor array based on graphene-CMOS integration
Abstract
Integrated circuits based on CMOS (complementary metal-oxide semiconductors) are at the heart of the technological revolution of the past 40 years, as these have enabled compact and low cost micro-electronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible light cameras has been impeded by the difficulty to combine other semiconductors than silicon with CMOS. Here, we show for the first time the monolithic integration of a CMOS integrated circuit with graphene, operating as a high mobility phototransistor. We demonstrate a high-resolution image sensor and operate it as a digital camera that is sensitive to UV, visible and infrared light. The demonstrated graphene-CMOS integration is pivotal for incorporating 2d materials into the next generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and even terahertz frequencies.. The demonstrated graphene-CMOS integration is pivotal for incorporating 2d materials into the next generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and even terahertz frequencies.
Keywords
Cite
@article{arxiv.1701.03242,
title = {Image sensor array based on graphene-CMOS integration},
author = {Stijn Goossens and Gabriele Navickaite and Carles Monasterio and Shuchi Gupta and Juan José Piqueras and Raúl Pérez and Gregory Burwell and Ivan Nikitskiy and Tania Lasanta and Teresa Galán and Eric Puma and Alba Centeno and Amaia Pesquera and Amaia Zurutuza and Gerasimos Konstantatos and Frank Koppens},
journal= {arXiv preprint arXiv:1701.03242},
year = {2017}
}
Comments
11 pages, 4 figures