相关论文: Maximum Metallic Conductivity in Si-MOS Structures

The criterion for the maximum incoherent conductivity $\sigma_{c,max}$ in the anisotropic system is shown to be $\sigma_{c,max} \sigma_{ab}=C (e^2/h)^2 n_{2D}$, where $n_{2D}$ is the two-dimensional electron density, and $C$ is a numerical…

The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped…

We study the low-temperature low-frequency conductivity sigma of an interacting one dimensional electron system in the presence of a periodic potential. The conductivity is strongly influenced by conservation laws, which, we argue, need be…

Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where…

For a broad range of electron densities $n$ and temperatures $T$, the in-plane magnetoconductivity of the two-dimensional system of electrons in silicon MOSFET's can be scaled onto a universal curve with a single parameter…

This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior…

For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form…

The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…

We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with…

Electrical conductivity of porous silicon fabricated form heavily doped p-type silicon is very sensitive to NO$_2$, even at concentrations below 100 ppb. However, sensitivity strongly depends on the porous microstructure. The structural…

This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…

Large fluctuations of conductivity with time are observed in a low-mobility two-dimensional electron system in silicon at low electron densities $n_s$ and temperatures. A dramatic increase of the noise power ($\propto 1/f^{\alpha}$) as…

Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…

Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as \sigma (n_s,T,B=0)=\sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density)…

We explore the electronic and topological properties of single crystal SrAl$_2$Si$_2$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced…

We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…

The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…

The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2…

Measurements of conductance $G$ on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal-insulator transition (MIT) at moderate temperatures (1 $<~ T <$ 4~K) and mesoscopic fluctuations of the conductance at low…

Superconductivity is observed with critical temperatures near 9K in the tetragonal compound Mo5PB2. This material adopts the Cr5B3 structure type common to supercondcuting Nb5Si3-xBx, Mo5SiB2, and W5SiB2, which have critical temperatures of…