相关论文: Conductance Fluctuations Near the Two-Dimensional …

We study conductance fluctuations in a two-dimensional electron gas as a function of chemical potential (or gate voltage) from the strongly insulating to the metallic regime. Power spectra of the fluctuations decay with two distinct…

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

We report investigations of conductance fluctuations (noise) in doped silicon at low temperatures (T$<20$K) as it is tuned through the metal-insulator transition (MIT). The scaled magnitude of noise, $\gamma_H$, increases with decrease in T…

We theoretically consider the carrier density tuned (apparent) two-dimensional (2D) metal-insulator-transition (MIT) in semiconductor heterostructure-based 2D carrier systems as arising from a classical percolation phenomenon in the…

In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…

By analyzing the temperature ($T$) and density ($n$) dependence of the measured conductivity ($\sigma$) of 2D electrons in the low density ($\sim10^{11}$cm$^{-2}$) and temperature (0.02 - 10 K) regime of high-mobility (1.0 and 1.5 $\times…

We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…

This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…

We have observed reproducible conductance fluctuations at low temperature in a small GaAs:Si wire driven across the Anderson transition by the application of a gate voltage. We analyse quantitatively the log-normal conductance statistics in…

This letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior…

Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…

We study a bandwidth controlled Mott metal-insulator transition (MIT) between a Fermi liquid metal and a quantum spin-liquid insulator at half-filling in three dimensions (3D). Using a slave rotor approach, and incorporating gauge field…

The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator…

For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form…

The low-temperature resistivity of a SiGe 2-dimensional hole gas has been studied using the gate controlled carrier density as a parameter. A metal-insulator transition is seen both in the temperature and in the electric field behaviour.…

We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical endpoint…

For the immediate vicinity of the metal-insulator transition (MIT), data on the dependence of the resistivity rho on the charge carrier concentration n from an Si MOSFET experiment by Kravchenko et al. and from an AlAs quantum well study by…

We investigate the metal-insulator transition occurring in semiconductors with magnetic impurities when lowering temperature. In contrast to the usually considered percolation transition in the non-uniform medium induced by the localization…

We analyse in detail Mott's variable range hopping in one dimension, expanding on earlier work by Raikh and Ruzin. We show that the large conductance fluctuations in disordered insulators result from a subtle interplay between purely…