相关论文: Electronic structure of strained InP/GaInP quantum…
Spherical shaped Si quantum dots (QDs) embedded into the SiO2 substrate are considered in the single sub-band effective mass approach. Nonparabolicity of the Si conduction band is described by the energy dependence of electron effective…
Non-toxic III-V quantum dots (QDs) are plagued with a higher density of performance-limiting trap states than II-VI and IV-VI QDs. Such trap states are generally understood to arise from under-coordinated atoms on the QD surface. Here, we…
High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interaction, and their compatibility with in-situ-deposited…
We provide an atomistic tight-binding description of a few carriers confined in ambipolar (n-p) double quantum dots defined in a semiconducting carbon nanotube. We focus our attention on the charge state of the system in which Pauli…
Motivated by the recent atomic-scale scanning tunneling microscope (STM) observation for a spatially localized in-gap state in an electron doped Mott insulator, we evaluate the local electronic state of the Hubbard model on the square…
The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their…
Electronic structure calculations for compressed molecular hydrogen are performed to provide more insight into the diversity of phenomena recently observed experimentally. We perform full-potential LAPW calculations and analyze them in…
We study a system in which electrons in a two-dimensional electron gas are confined by a nonhomogeneous nuclear spin polarization. The system consists of a heterostructure that has non-zero nuclei spins. We show that in this system…
Single layer core/shell structures consisting of graphene as core and hexagonal boron nitride as shell are studied using first-principles plane wave method within density functional theory. Electronic energy level structure is analysed as a…
We demonstrate the formation of confinement potentials in suspended nanostructures induced by the geometry of the devices. We then propose a setup for measuring the resulting geometric phase change of electronic wave functions in such a…
We have studied the electronic structure of CdS/ZnSe coupled quantum dot, a novel heterostructure at the nano-scale. Our calculations reveal CdS/ZnSe coupled quantum dots to be of type-II in nature where the anion-p states play an important…
Fabrication of devices made by isolated Graphene or Graphene-like single layers (such as h-BN) has opened up possibility of examining highly correlated states of electron systems in parts of their phase diagram that is impossible to access…
In quantum Hall systems with two narrow constrictions, tunneling between opposite edges can give rise to quantum interference and Aharonov-Bohm-like oscillations of the conductance. When there is an integer quantized Hall state within the…
The electronic structure of radially polarized excitons in structured nanorings is analyzed, with emphasis in the ground-state properties and their dependence under applied magnetic fields perpendicular to the ring plane. The electron-hole…
Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled…
Quantum Hall edge channels can be combined with metallic regions to fractionalize electrons and form correlated impurity models. We study a minimal device, that has been experimentally achieved quite recently, with two floating islands…
Various-thickness Ag islands were prepared on Si(111)-7$\times$7 using the one-step deposition at a high substrate temperature. An electronic state centered at -0.40$\sim$-0.15eV versus E$_{Fermi}$, detectable on the surface of the Ag…
We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of…
When an electron is confined to a triangular atomic thick layer of graphene [1-5] with zig-zag edges, its energy spectrum collapses to a shell of degenerate states at the Fermi level (Dirac point) [6-9]. The degeneracy is proportional to…
We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is…