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相关论文: Mott-Hubbard insulators for systems with orbital d…

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We apply the dynamical mean field theory (DMFT) in the iterative perturbation theory(IPT) to doubly degenerate eg bands and triply degenerate tg bands on a simple cubic lattice and calculate the spectrum and optical conductivity in…

强关联电子 · 物理学 2008-09-25 Oki Miura , Takeo Fujiwara

The nondegenerate two-orbital Hubbard model is studied within the dynamic mean-field theory to reveal the influence of two important factors, i.e. crystal field splitting and interorbital hopping, on orbital selective Mott transition (OSMT)…

强关联电子 · 物理学 2009-11-06 Yun Song , Liang-Jian Zou

A slave boson representation for the degenerate Hubbard model is introduced. The location of the metal to insulator transition that occurs at commensurate densities is shown to depend weakly on the band degeneracy M. The relative weights of…

强关联电子 · 物理学 2016-08-31 Raymond Fresard , Gabriel Kotliar

The localization-delocalization transition is at the heart of strong correlation physics. Recently, there is great interest in multiorbital systems where this transition can be restricted to certain orbitals, leading to an orbital-selective…

强关联电子 · 物理学 2022-08-24 Fabian B. Kugler , Gabriel Kotliar

We study the real-time evolution of a charge-excited state in a one-dimensional $e_{\rm g}$-orbital degenerate Hubbard model, by a time-dependent density-matrix renormalization group method. Considering a chain along the $z$ direction,…

强关联电子 · 物理学 2015-05-27 Hiroaki Onishi

We study variable range hopping in the quantum Hall effect regime in the presence of a metallic gate parallel to the plane of a two-dimensional electron gas. Screening of the Coulomb interaction by the gate causes the partial ``filling'' of…

凝聚态物理 · 物理学 2009-10-22 I. L. Aleiner , B. I. Shklovskii

The iterative perturbation theory of the dynamical mean field theory is generalized to arbitrary electron occupation in case of multi-orbital Hubbard bands. We present numerical results of doubly degenerate Eg bands in a simple cubic…

强关联电子 · 物理学 2007-12-06 Takeo Fujiwara , Susumu Yamamoto , Yasushi Ishii

We examine finite-temperature phase transitions in the two-orbital Hubbard model with different bandwidths by means of the dynamical mean-field theory combined with the continuous-time quantum Monte Carlo method. It is found that there…

强关联电子 · 物理学 2015-10-28 Aaram J. Kim , MooYoung Choi , Gun Sang Jeon

We have investigated electronic properties of the degenerate multi-orbital Hubbard model, in the limit of large spatial dimension. A new local model, including a doubly degenerate strongly correlated site has been introduced and solved in…

强关联电子 · 物理学 2007-05-23 Pierre Lombardo , Gilbert Albinet

Inspired by recent discovery of correlated insulating states in twisted bilayer graphene (TBG), we study a two-orbital Hubbard model on the honeycomb lattice with two electrons per unit cell. Based on the real-space density matrix…

强关联电子 · 物理学 2019-08-28 Zheng Zhu , D. N. Sheng , Liang Fu

The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…

凝聚态物理 · 物理学 2009-11-10 Arata Tanaka

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…

We study the one-band Hubbard model at half filling with hopping asymmetry and its effective model at finite but large U up to the second order of tmix/U. Two variational wave functions, the resonating valence bond (RVB) wave function and…

强关联电子 · 物理学 2007-05-23 Yuchuan Wen , Yue Yu

A burning question in the emerging field of spin-orbit driven insulating iridates, such as Na2IrO3 and Li2IrO3 is whether the observed insulating state should be classified as a Mott-Hubbard insulator derived from a half-filled relativistic…

强关联电子 · 物理学 2014-01-31 I. I. Mazin , S. Manni , K. Foyevtsova , Harald O. Jeschke , P. Gegenwart , Roser Valenti

We investigate the ground-state properties of the one-dimensional two-band Hubbard model with different bandwidths. The density-matrix renormalization group method is applied to calculate the averaged electron occupancies $n$ as a function…

强关联电子 · 物理学 2009-11-13 S. Miyashita , Y. Yamashita , K. Yonemitsu , A. Koga , N. Kawakami

On the basis of the multi-orbital dynamical mean field theory, a three-orbital Hubbard model with a relativistic spin-orbit coupling (SOC) is studied at five electrons per site. The numerical calculations are performed by employing the…

强关联电子 · 物理学 2015-06-23 Toshihiro Sato , Tomonori Shirakawa , Seiji Yunoki

The two-orbital Hubbard model on a square lattice at quarter filling (electron number per site $n=1$) is investigated by the variational Monte Carlo method. For the variational wave function, we include short-range doublon-holon binding…

强关联电子 · 物理学 2021-02-16 Katsunori Kubo

We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential $\Delta$, the so-called ionic Hubbard model, using cluster dynamical mean field theory. We…

强关联电子 · 物理学 2015-06-25 S. S. Kancharla , E. Dagotto

In order to clarify the physics of the crossover from a Peierls band insulator to a correlated Mott-Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein-Hubbard model using…

强关联电子 · 物理学 2009-11-07 H. Fehske , A. P. Kampf , M. Sekania , G. Wellein

We investigate the metal-insulator transition of the one-dimensional SU(N) Hubbard model for repulsive interaction. Using the bosonization approach a Mott transition in the charge sector at half-filling (k_F=\pi/Na_0) is conjectured for N >…

强关联电子 · 物理学 2009-10-31 Roland Assaraf , Patrick Azaria , Michel Caffarel , Philippe Lecheminant