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相关论文: Mott-Hubbard insulators for systems with orbital d…

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We investigate the ground-state phase diagram of the one-dimensional "ionic" Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix…

强关联电子 · 物理学 2009-11-10 A. P. Kampf , M. Sekania , G. I. Japaridze , Ph. Brune

In moir\'e-patterned van der Waals structures of transition metal dichalcogenides, correlated insulators can form under integer and fractional fillings, whose transport properties are governed by various quasiparticle excitations including…

介观与纳米尺度物理 · 物理学 2025-09-04 Zijian Ma , Hongyi Yu

Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…

强关联电子 · 物理学 2007-05-23 Tsuyoshi Kashima , Masatoshi Imada

A model of strongly disordered lattice system with long-range Coulomb interactions between localized charge carriers has been considered. The total electronic energy is characterized by the presence of multiple metastable minima (including…

强关联电子 · 物理学 2013-03-08 Yuri G. Pogorelov , J. M. B. Lopes dos Santos , J. M. V. P. Lopes

We consider spin correlations in the one dimensional half filled repulsive Hubbard model. For very large values of the on-site repulsion U the spin correlations are dominated by virtual hopping processes of electrons and are described in…

强关联电子 · 物理学 2009-11-10 M. J. Bhaseen , F. H. L. Essler , A. Grage

Stimulated by recent works highlighting the indispensable role of Coulomb interactions in the formation of helical chains and chiral electronic order in the elemental chalcogens, we explore the p-orbital Hubbard model on a one-dimensional…

The combination of strong spin-orbit coupling and Coulomb interactions makes the $5d$ iridates a unique platform for realizing novel correlated electronic states. Here, utilizing infrared spectroscopy, we demonstrate that a robust Mott…

强关联电子 · 物理学 2026-03-06 Kai Wang , Jun Yang , Chaoyang Kang , Weikang Wu , Wenka Zhu , Jianzhou Zhao , Yaomin Dai , Bing Xu

This paper derives the anisotropic superexchange interactions from a Hubbard model for excitations within the copper 3d band and the oxygen 2p band of the undoped insulating cuprates. We extend the recent calculation of Yildirim et al.…

凝聚态物理 · 物理学 2009-10-28 O. Entin-Wohlman , A. B. Harris , Amnon Aharony

We discuss the photovoltaic effect at a p-n heterojunction, in which the illuminated side is a doped Mott insulator, using the simplest description of a Mott insulator within the Hubbard model. We find that the internal quantum efficiency…

强关联电子 · 物理学 2015-05-14 Efstratios Manousakis

Using the variational cluster approach based on the self-energy functional theory, we study the possible occurrence of excitonic order and superconductivity in the two-orbital Hubbard model with intra- and inter-orbital Coulomb…

强关联电子 · 物理学 2018-05-17 Ryo Fujiuchi , Koudai Sugimoto , Yukinori Ohta

We have performed an all-electron fully relativistic density functional calculation to study the magnetic properties of FeBr2. We show for the first time that the correlation effect enhances the contribution from orbital degrees of freedom…

强关联电子 · 物理学 2009-11-07 S. J. Youn , B. R. Sahu , Kwang S. Kim

We investigate the optical conductivity of half-filled N-leg Hubbard ladders far into the ``deconfinement'' limit (i.e., weak Hubbard interaction and relatively strong interchain hopping). The N-leg Hubbard ladder is equivalent to an N-band…

强关联电子 · 物理学 2007-05-23 J. Hopkinson , K. Le Hur

The diagram technique for the one-band Hubbard model is formulated for the case of moderate to strong Hubbard repulsion. The expansion in powers of the hopping constant is expressed in terms of site cumulants of electron creation and…

强关联电子 · 物理学 2007-05-23 A. Sherman

We investigate the orbital selective Mott transition in two-band Hubbard models by means of the Gutzwiller variational theory. In particular, we study the influence of a finite local hybridisation between electrons in different orbitals on…

强关联电子 · 物理学 2009-11-13 Joerg Buenemann , David Rasch , Florian Gebhard

We extend the periodic Anderson model by switching on a Hubbard $U_d$ for the conduction electrons. The nearly integral valent (Kondo) limit of the Anderson--Hubbard model is studied with the Gutzwiller variational method. The new formula…

凝聚态物理 · 物理学 2009-10-28 K. Itai , P. Fazekas

We investigate the strong correlation effect in the spinless electron-hole two-band Hubbard model using the dynamical mean-field theory. At half filling, both the renormalization factor $Z$ and the number of conduction electrons (valence…

强关联电子 · 物理学 2026-05-26 Masashi Akiyama , Yusuke Inokuma , Yoshiaki Ono

Expressions for dependences of the pre-exponential factor \sigma_3 and the thermal activation energy \epsilon_3 of hopping electric conductivity of holes via boron atoms on the boron atom concentration N and the compensation ratio K are…

材料科学 · 物理学 2011-09-06 N. A. Poklonski , S. A. Vyrko , A. G. Zabrodskii

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down…

强关联电子 · 物理学 2018-01-17 O. Nájera , M. Civelli , V. Dobrosavljević , M. J. Rozenberg

We study a multi-band Hubbard model in its orbital selective Mott phase, in which localized electrons in a narrow band coexist with itinerant electrons in a wide band. The low-energy physics of this phase is shown to be closely related to…

强关联电子 · 物理学 2009-11-11 S. Biermann , L. de' Medici , A. Georges

The ground state of a one-dimensional Hubbard model having the next-nearest neighbor hopping (t') as well as the nearest-neighbor one (t) is numerically investigated at half-filling. A quantum Monte Carlo result shows a slowly decaying…

强关联电子 · 物理学 2009-10-30 Kazuhiko Kuroki , Ryotaro Arita , Hideo Aoki
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