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相关论文: Mott-Hubbard insulators for systems with orbital d…

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A lightly doped single-band Hubbard model on a two leg ladder exhibits a Luther-Emery phase, while the three-band Hubbard ladder behaves as a Luttinger liquid upon hole doping. In order to understand this discrepancy, we present a…

强关联电子 · 物理学 2023-10-30 Luhang Yang , Thomas P. Devereaux , Hong-Chen Jiang

We extend previous studies on orbital-selective Mott transitions in the paramagnetic state of the half-filled degenerate two-band Hubbard model to the general doped case, using a high-precision quantum Monte Carlo dynamical mean-field…

强关联电子 · 物理学 2009-09-22 Eberhard Jakobi , Nils Blümer , Peter van Dongen

We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…

强关联电子 · 物理学 2018-08-30 Caterina De Franco , Luca F. Tocchio , Federico Becca

We study the phase diagram of a one-dimensional extended Hubbard model with antiferromagnetic exchange interaction analytically and numerically. The bosonization and transfer-matrix renormalization group methods are used in the…

强关联电子 · 物理学 2009-11-10 Jianhui Dai , Xiaoyong Feng , Tao Xiang , Yue Yu

We discuss a hopping model of electrons between idealized molecular sites with local orbital degeneracy and dynamical Jahn-Teller effect, for crystal field environments of sufficiently high symmetry. For the Mott-insulating case (one…

强关联电子 · 物理学 2009-10-31 Giuseppe Santoro , Leonardo Guidoni , Alberto Parola , Erio Tosatti

At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate…

无序系统与神经网络 · 物理学 2008-03-03 Elvira Ritz , Martin Dressel

Perturbative schemes utilizing a spectral moment expansion are well known and extensively used for investigating the physics of model Hamiltonians and real material systems. The advantages they offer, in terms of being computationally…

We consider an effective Hubbard model with spin- and direction-dependent complex hoppings $t$, applied to twisted homobilayer WSe$_2$ using a variational Monte Carlo approach. The electronic correlations are taken into account by applying…

强关联电子 · 物理学 2024-01-10 Andrzej Biborski , Paweł Wójcik , Michał Zegrodnik

In this study, we perform a strong-coupling expansion up to third order of the hopping parameter $t$ for the spin-1 Bose--Hubbard model with antiferromagnetic interaction. As expected from previous studies, the Mott insulator phase is…

量子气体 · 物理学 2015-06-11 Takashi Kimura

The anisotropic two-orbital Hubbard model is investigated at low temperatures using high-precision quantum Monte Carlo (QMC) simulations within dynamical mean-field theory (DMFT). We demonstrate that two distinct orbital-selective Mott…

强关联电子 · 物理学 2015-06-25 N. Blümer , C. Knecht , K. Pozgajcic , P. G. J. van Dongen

The $1D$ phase diagram of a model for correlated hopping of electrons in a lattice of Berry phase molecules is presented. Electrons hop in presence of an extra orbital degree of freedom at each site. This is mimicked as a spin-1 variable…

凝聚态物理 · 物理学 2012-10-30 Giuseppe Santoro , Nicola Manini , Alberto Parola , Erio Tosatti

We analyze the electronic properties of interacting crystal field split three band systems. Using a rotationally invariant slave boson approach we analyze the behavior of the electronic mass renormalization as a function of the intralevel…

强关联电子 · 物理学 2019-05-22 Jorge I. Facio , Pablo S. Cornaglia

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…

强关联电子 · 物理学 2025-04-24 Qiang Gao , Haiyang Chen , Wen-shin Lu , Yang-hao Chan , Zhenhua Chen , Yaobo Huang , Zhengtai Liu , Peng Chen

We investigate the nature of the insulating phases in a bilayer Hubbard model with intralayer coupling $t$ and interlayer coupling $t_{\perp}$ at large interaction strength $U/t$ and half-filling. We consider a dynamical cluster…

强关联电子 · 物理学 2015-06-17 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti

Taking the orbital degeneracy of $e_g$ conduction bands and the Coulomb interaction into account in a double-exchange model, we investigate charge dynamics of perovskite Mn oxides by the Lancz$\ddot{\rm o}$s diagonalization method. In the…

强关联电子 · 物理学 2009-10-31 Hiroki Nakano , Yukitoshi Motome , Masatoshi Imada

With the aid of both a semi-analytical and a numerically exact method we investigate the charge dynamics in the vicinity of half-filling in the one- and two-dimensional $t$-$J$ model derived from a Fermi-Hubbard model in the limit of large…

强关联电子 · 物理学 2022-02-16 Philip Bleicker , Dag-Björn Hering , Götz S. Uhrig

We study the effect of the correlated hopping term and the intersite Coulomb interaction term on principal features of the $d$-$wave$ superconducting (SC) state, in both the electron and hole doped regimes within the t-J-U model. In our…

超导电性 · 物理学 2017-08-23 Michał Zegrodnik , Józef Spałek

We investigate the phase diagram of the square lattice bilayer Hubbard model at half filling with the variational Monte Carlo method for both the magnetic and the paramagnetic case as a function of interlayer hopping t_perp and on-site…

强关联电子 · 物理学 2014-03-11 Robert Rüger , Luca F. Tocchio , Roser Valentí , Claudius Gros

Neutron scattering is used to investigate the single-ion spin and orbital excitations below the Mott-Hubbard gap in CoO. Three excitations are reported at 0.870 $\pm$ 0.009 eV, 1.84 $\pm$ 0.03, and 2.30 $\pm$ 0.15 eV. These were…

强关联电子 · 物理学 2015-06-17 R. A. Cowley , W. J. L. Buyers , C. Stock , Z. Yamani , C. Frost , J. W. Taylor , D. Prabhakaran

Strongly correlated metals often display anomalous transport, including $T$-linear resistivity above the Mott-Ioffe-Regel limit. We introduce a tractable microscopic model for such bad metals, by supplementing the well-known Hubbard model…

强关联电子 · 物理学 2019-05-15 Connie H. Mousatov , Ilya Esterlis , Sean A. Hartnoll