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相关论文: Surface States, Surface Metal-Insulator, and Surfa…

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In a recent Letter, Zhao et al. [1] reported the origin of quasi-one-dimensional metal-insulator (MI) transitions in compound semiconductor surfaces. Based on a density-functional theory (DFT) calculation within the generalized gradient…

介观与纳米尺度物理 · 物理学 2017-08-02 Sun-Woo Kim , Yoon-Gu Kang , Hyun-Jung Kim , Jun-Hyung Cho

Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…

强关联电子 · 物理学 2007-05-23 M. Potthoff

A brief review of metal-insulator transitions in three-dimensional doped semiconductors, with emphasis on the "critical exponent puzzle"; and new experimental findings that signal the possibility of an unexpected metal-insulator transition…

强关联电子 · 物理学 2009-09-25 Myriam P. Sarachik

The metal-insulator transition observed in the In/Si(111)-4x1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin…

材料科学 · 物理学 2009-11-11 Sampsa Riikonen , Andres Ayuela , Daniel Sanchez-Portal

Recent experiments on the two dimensional electron gas in various semiconductor devices have revealed an unexpected metal-insulator transition and have challenged the previously held assumption that there is no such transition in two…

强关联电子 · 物理学 2017-02-08 Sudip Chakravarty , Steven Kivelson , Chetan Nayak , Klaus Voelker

A two-dimensional gas of non-interacting quasiparticles in a nearly periodic potential is considered at zero temperature. The potential is a superposition of a periodic potential, induced by the charge density wave of a Wigner crystal, and…

介观与纳米尺度物理 · 物理学 2007-05-23 K. Ziegler

Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…

强关联电子 · 物理学 2008-02-03 V. M. Pudalov

It is well-known that the electric field can induce phase transitions between superconducting, metallic and insulating states in thin-film materials due to its control of the charge carrier density. Since a similar effect on the charge…

超导电性 · 物理学 2023-08-14 Liyu Yin , Yunfei Bai , Ming Zhang , A. A. Shanenko , Yajiang Chen

The theory of the 2k_F and 4k_F instabilities in quarter-filled band organic conductors is revisited. The phase angles of the 2k_F bond and charge density waves are shown to change as electron correlation is turned on, and this switching of…

凝聚态物理 · 物理学 2009-10-22 K. C. Ung , S. Mazumdar , D. Toussaint

The superconductor-insulator transition in two dimensions has been widely investigated as a paradigmatic quantum phase transition. The topic remains controversial, however, because many experiments exhibit a metallic regime with saturating…

介观与纳米尺度物理 · 物理学 2019-06-07 C. G. L. Bøttcher , F. Nichele , M. Kjaergaard , H. J. Suominen , J. Shabani , C. J. Palmstrøm , C. M. Marcus

We have measured the surface acoustic wave velocity shift in a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES) in a low-density regime ($<$ $10^{10}$ cm$^{-2}$) at zero magnetic field. The interaction of the…

介观与纳米尺度物理 · 物理学 2009-11-11 L. A. Tracy , J. P. Eisenstein , M. P. Lilly , L. N. Pfeiffer , K. W. West

Anomalous metal-insulator transition observed in filled skutterudite CeOs$_4$Sb$_{12}$ is investigated by constructing the effective tight-binding model with the Coulomb repulsion between f electrons. By using the mean field approximation,…

强关联电子 · 物理学 2009-11-11 Yoshiki Imai , Keitaro Sakurazawa , Tetsuro Saso

A three-dimensional strong-topological-insulator or -semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state…

强关联电子 · 物理学 2015-06-29 A. P. Weber , Q. D. Gibson , Huiwen Ji , A. N. Caruso , A. V. Fedorov , R. J. Cava , T. Valla

The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…

强关联电子 · 物理学 2009-10-31 Junren Shi , X. C. Xie

The nature of a metal-insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions, as reported in recent experiments of Roddaro et al [1], is examined. We attribute this phenomenon to a splitting of…

强关联电子 · 物理学 2009-11-11 Emiliano Papa , Tilo Stroh

We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms…

无序系统与神经网络 · 物理学 2015-06-24 S. Das Sarma , E. H. Hwang

Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a…

强关联电子 · 物理学 2009-10-30 P. T. Coleridge , R. L. Williams , Y. Feng , P. Zawadzki

We consider topological invariants describing semimetal (gapless) and insulating (gapped) states of the quantum vacuum of Standard Model and possible quantum phase transitions between these states.

高能物理 - 唯象学 · 物理学 2014-11-20 G. E. Volovik

This paper deals with a significant family of compounds predicted by simplistic electronic structure theory to be metals but are, in fact, insulators. This false metallic state has been traditionally attributed in the literature to reflect…

材料科学 · 物理学 2020-11-30 Oleksandr I. Malyi , Alex Zunger

The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…

强关联电子 · 物理学 2007-05-23 S. V. Kravchenko , M. P. Sarachik
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