The so-called two dimensional metal-insulator transition
Disordered Systems and Neural Networks
2015-06-24 v2
Abstract
We provide a critical perspective on the collection of low-temperature transport phenomena in low-density two-dimensional semiconductor systems often referred to as the 2D metal-insulator transition. We discuss the physical mechanisms underlying the anomalous behavior of the two-dimensional effective metallic phase and the metal-insulator transition itself. We argue that a key feature of the 2D MIT physics is the long-range bare Coulombic disorder arising from the random distribution of charged impurities in the low-density 2D semiconductor structures.
Cite
@article{arxiv.cond-mat/0411528,
title = {The so-called two dimensional metal-insulator transition},
author = {S. Das Sarma and E. H. Hwang},
journal= {arXiv preprint arXiv:cond-mat/0411528},
year = {2015}
}
Comments
12 pages, 4 figures; Revised final version with additional references and some modifications in the text