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相关论文: Hole Pockets in the Doped 2D Hubbard Model

200 篇论文

We compare the one-loop renormalization group flow to strong coupling of the electronic interactions in the two-dimensional t-t'-Hubbard model with t'=-0.3t for band fillings smaller and larger than half-filling. Using a numerical N-patch…

强关联电子 · 物理学 2009-11-07 Carsten Honerkamp

We address recent experiments shedding light on the energy spectrum of under- and optimally doped cuprates at temperatures above superconducting transition. Angle resolved photoemission reveals coherent excitation only near nodal points on…

超导电性 · 物理学 2013-11-20 Lev P. Gor'kov , Gregory B. Teitel'baum

Doping a Mott insulator gives rise to unconventional superconducting correlations. Here we address the interplay between d-wave superconductivity and Mott physics using the two-dimensional Hubbard model with cellular dynamical mean-field…

强关联电子 · 物理学 2023-08-30 C. Walsh , M. Charlebois , P. Sémon , A. -M. S. Tremblay , G. Sordi

We demonstrate the ability to visualize real-space dynamics of charge gap and magnon excitations in the Mott phase of the single-band Hubbard model and the remnants of these excitations with hole or electron doping. At short times, the…

强关联电子 · 物理学 2014-04-16 Yao Wang , Chunjing Jia , Brian Moritz , Thomas P. Devereaux

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2007-05-23 Yasuo Ohashi , Yoshiaki Ōno

We theoretically investigate pump-probe optical responses in the two-dimensional extended Hubbard model describing cuprates by using a time-dependent Lanczos method. At half filling, pumping generates photoinduced absorptions inside the…

强关联电子 · 物理学 2017-11-23 Kazuya Shinjo , Takami Tohyama

The doped Mott insulator in one dimension has been studied based on the phase Hamiltonian with the Umklapp scattering process, in which the charge degree of freedom is described by the quantum sine-Gordon model. The well-known equivalence…

凝聚态物理 · 物理学 2009-10-28 Michiyasu Mori , Hidetoshi Fukuyama

Many strongly correlated systems exhibit strange metallic behavior in certain parameter regimes characterized by anomalous transport properties that are irreconcilable with a Fermi-liquid-like description in terms of quasiparticles. The…

强关联电子 · 物理学 2024-10-29 Andrew A. Allocca

A simple model to describe the energetic phase diagram of electron-doped cuprate superconductor is developed. Interband pairing operates between the UHB and the defect states created by doping and supplied by both extincting HB-s. Two…

超导电性 · 物理学 2009-11-13 N. Kristoffel , P. Rubin

Identification of the electronic state that appears upon doping a Mott insulator is important to understand the physics of cuprate high-temperature superconductors. Recent scanning tunneling microscopy of cuprates provides evidence that a…

超导电性 · 物理学 2019-01-31 R. Nourafkan , M. Côté , A. - M. S. Tremblay

We show that antiferromagnetic spin-density wave order in the two-dimensional Hubbard model yields a drop of the charge carrier density as observed in recent transport measurements for cuprate superconductors in high magnetic fields upon…

强关联电子 · 物理学 2020-05-01 Pietro M. Bonetti , Johannes Mitscherling , Demetrio Vilardi , Walter Metzner

High temperature superconductivity was achieved by introducing holes in a parent compound consisting of copper oxide layers separated by spacer layers. It is possible to dope some of the parent compounds with electrons, and their physical…

强关联电子 · 物理学 2015-05-19 Cedric Weber , Kristjan Haule , Gabriel Kotliar

We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer, Ppl, in Y1-xCaxBa2Cu3O6 (Ppl = x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl, S290(Ppl), of…

超导电性 · 物理学 2009-11-10 T. Honma , P. H. Hor , H. H. Hsieh , M. Tanimoto

An essentially exact solution of the infinite dimensional Hubbard model is made possible by using a self-consistent mapping of the Hubbard model in this limit to an effective single impurity Anderson model. Solving the latter with quantum…

凝聚态物理 · 物理学 2009-10-22 M. Jarrell , Thomas Pruschke

We have studied the ground state of the two-dimensional (2D) Hubbard model by using a quantum monte method paying special attention to the shell structure effect on finite size clusters. Our calculations show there is a gap for spin…

强关联电子 · 物理学 2007-05-23 Yoshihiro ASAI

Within the framework of the kinetic energy driven d-wave superconductivity, the electronic structure of the electron doped cuprate superconductors is studied. It is shown that although there is an electron-hole asymmetry in the phase…

超导电性 · 物理学 2007-05-23 Li Cheng , Huaiming Guo , Shiping Feng

We study the properties of the ground states of the one- and two-dimensional Hubbard models at half filling and moderate doping using entanglement-based measures, which we calculate numerically using the momentum-space density matrix…

强关联电子 · 物理学 2017-07-06 G. Ehlers , J. Sólyom , Ö. Legeza , R. M. Noack

Over the past two decades, advances in computational algorithms have revealed a curious property of the two-dimensional Hubbard model (and related theories) with hole doping: the presence of close-in-energy competing ground states that…

超导电性 · 物理学 2019-11-07 Neil J. Robinson , Peter D. Johnson , T. Maurice Rice , Alexei M. Tsvelik

We study the electronic spectral properties at zero temperature of the one-dimensional (1D) version of the degenerate two-orbital Kanamori Hubbard model (KHM), one of the well established frameworks to study transition metal compounds,…

强关联电子 · 物理学 2022-03-04 N. Aucar Boidi , H. Fernández García , Y. Núñez-Fernández , K. Hallberg

Measurements of the Hall coefficient in La$_{2-x}$Sr$_x$CuO$_4$, ranging from the undoped ($x = p = 0$) Mott insulator to overdoped compounds, exhibit a temperature dependence that offers insights into their electronic structure. We…

超导电性 · 物理学 2025-03-10 Júlia C. Anjos , Hércules S. Santana , E. V. L. de Mello
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