相关论文: Anisotropy and Order of Epitaxial Self-Assembled Q…
Epitaxial self-assembled quantum dots (SAQDs) are of interest for nanostructured optoelectronic and electronic devices such as lasers, photodetectors and nanoscale logic. Spatial order and size order of SAQDs are important to the…
Heteroepitaxial self-assembled quantum dots (SAQDs) will allow breakthroughs in electronics and optoelectronics. SAQDs are a result of Stranski-Krastanow growth whereby a growing planar film becomes unstable after an initial wetting layer…
Epitaxial self-assembled quantum dots (SAQDs) are of both technological and fundamental interest, but their reliable manufacture still presents a technical challenge. To better understand the formation, morphology and ordering of epitaxial…
Achieving deterministic placement of self-assembled quantum dots (QDs) during epitaxial growth is essential for the reliable and efficient fabrication of high-quality single-photon sources and solid-state cavity quantum electrodynamics…
Epitaxial growth of orthorhombic SnSe on cubic substrates is challenging due to lattice-symmetry mismatch and anisotropic bonding. Here we demonstrate that epitaxial films with sharp interfaces can be achieved for layered SnSe grown…
Bottom-up assembly of nanocrystals (NCs) into ordered arrays, or superlattices (SLs), is a promising route to design materials with new functionalities, but the degree of control over assembly into functional structures remains challenging.…
Self organizing anisotropic nematic liquid crystals (LCs) induce self-assembly on quantum dots (QDs) to form one-dimensional chains along the nematic director. Spatial ordering of QDs, achieved in the nematic LC matrix, can be controlled in…
This work presents some fundamental features of pyramidal site-controlled InGaAs Quantum Dots (QDs) grown by MetalOrganic Vapour Phase Epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the…
We consider a model to describe stable configurations in epitaxial growth of crystals in the two dimensional case, and in the regime of linearized elasticity. The novelty is that the model also takes into consideration the adatom density on…
Sb thin films have attracted wide interests due to their tunable band structure, topological phases, and remarkable electronic properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by…
The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed…
This paper has been withdrawn by the authors. The 3D distribution of self-assembled stacked quantum dots (QDs) is a key parameter to obtain the highest performance in a variety of optoelectronic devices. In this work, we have measured this…
Strained coherent heteroepitaxy of III-V semiconductor films such as In$_x$Ga$_{1-x}$As/GaAs has potential for electronic and optoelectronic applications such as high density logic, quantum computing architectures, laser diodes, and other…
The surface curvature of membranes, interfaces, and substrates plays a crucial role in shaping the self-assembly of particles adsorbed on these surfaces. However, little is known about the interplay between particle anisotropy and surface…
The self-assembly of nanocrystals enables new classes of materials whose properties are controlled by the periodicities of the assembly, as well as by the size, shape and composition of the nanocrystals. While self-assembly of spherical…
This work presents a foundational approach for fabricating arrays of self-aligned micro- and nanopillar structures incorporating individual site-controlled quantum dots (QDs) for enhanced light extraction. This method leverages the…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…
We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is…
Self-assembled InAs quantum dots (QDs) grown on GaAs(001) surface by molecular beam epitaxy under continuous and growth-interruption modes exhibit two families of QDs, quasi-3D (Q3D) and 3D QDs, whose volume density evolution is…
Over the past two decades, epitaxial semiconductor quantum dots (QDs) have demonstrated very promising properties as sources of single photons and entangled photons on-demand. Among different growth methods, droplet etching epitaxy has…