相关论文: 29Si Hyperfine Structure of the E'_\alpha Center i…

The intrinsic iron(III) impurity center in polycrystalline lead titanate was investigated by means of high-frequency electron paramagnetic resonance (EPR) spectroscopy in order to determine the local-environment sensitive fine structure…

The E' center is a paradigmatic radiation-induced defect in SiO2 whose peculiar EPR and hyperfine activity has been known since over 40 years. This center has been traditionally identified with a distorted, positively-charged oxygen vacancy…

We have studied the effects of oxygen on hydrogenated amorphous/crystalline silicon films in terms of their structural and optical properties. Different hydrogenated silicon oxide (SiO:H) and silicon (Si:H) films are fabricated between…

The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of…

The silicon suboxide SiOx (x<2.0) offers promising industrial application possibilities ranging from electrodes in lithium-ion batteries, which are used widely in electrical vehicles and portable devices to sensing applications. Therefore,…

The structure of the first sharp diffraction peak (FSDP) of amorphous silicon (${\it a}$-Si) near 2 Angstrom$^{-1}$ is addressed with particular emphasis on the position, intensity, and width of the diffraction curve. By studying a number…

Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer…

Modern electronic devices are unthinkable without the well-controlled formation of interfaces at heterostructures. These often involve at least one amorphous material. Modeling such interfaces poses a significant challenge, since a…

Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode…

SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of…

Electron paramagnetic resonance (EPR) study of air-physisorbed defective carbon nano-onions evidences in favor of microwave assisted formation of weakly-bound paramagnetic complexes comprising negatively-charged O2- ions and edge carbon…

We have observed the Class I protostellar source Elias 29 with Atacama Large Millimeter/submillimeter Array (ALMA). We have detected CS, SO, $^{34}$SO, SO$_2$, and SiO line emissions in a compact component concentrated near the protostar…

The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…

In $e$-beam evaporated amorphous silicon ($a$-Si), the densities of two-level systems (TLS), $n_{0}$ and $\overline{P}$, determined from specific heat $C$ and internal friction $Q^{-1}$ measurements, respectively, have been shown to vary by…

Luminescence and optical absorption due to radiation damage centers in silicon has been studied exhaustively for decades, but is receiving new interest for applications as emitters for integrated silicon photonic technologies. While a…

With an ongoing discussion on the oxygen diffusion along crystal defects remaining, it is difficult to study this phenomenon in Al containing intermetallic materials due to its rapid and passivating oxide formation. We report here the…

Microdisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H<Er>) layers sandwiched in air and native SiO2 on Si substrates. Annealing condition is optimized to allow large emission at 1550…

We survey the Si K edge structure in various absorbed Galactic low-mass X-ray binaries (LMXBs) to study states of silicon in the inter- and circum-stellar medium. The bulk of these LMXBs lie toward the Galactic bulge region and all have…

Abstract Despite advances toward improving the quality of $p$-type 4H-SiC substrates and layers, we still have no model capable of accounting for the multitude of boron-related optical, junction, and paramagnetic resonance experiments…

The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties…