相关论文: 29Si Hyperfine Structure of the E'_\alpha Center i…

We present an analysis of ALMA 1.25 millimeter continuum observations of spiral structures in three protoplanetary disks from the Disk Substructures at High Angular Resolution Project. The disks around Elias 27, IM Lup, and WaOph 6 were…

Spin-conserving and spin-flip opaque reflections of electrons from a potential barrier in heterostructures are described. An electric field of the barrier is considered to be the only source of energy spin splitting in the presence of…

The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in…

We study the shape coexistence in the nucleus $^{28}$Si with the nuclear shell model using numerical diagonalizations complemented with variational calculations based on the projected generator-coordinate method. The theoretical electric…

We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We…

Structurally disordered materials continue to pose fundamental questions, including that of how different disordered phases ("polyamorphs") can coexist and transform from one to another. As a widely studied case, amorphous silicon (a-Si)…

The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so called "boson peak" in neutron and optical spectroscopy. These same modes manifest themselves as two level systems…

Pulsed electron paramagnetic resonance spectroscopy of the photoexcited, metastable triplet state of the oxygen-vacancy center in silicon reveals that the lifetime of the ms = \pm1 sub-levels differ significantly from that of the ms =0…

We have detected the submillimeter-wave fine-structure transition (3P1-3P0) of 13C, [13C I], in the gaseous debris disk of 49 Ceti with the Atacama Large Millimeter/submillimeter Array (ALMA). Recently, the [C I] 3P1-3P0 emission has been…

The anharmonic decay rates of atomic vibrations in amorphous silicon (a-Si) and paracrystalline silicon (p-Si), containing small crystalline grains embedded in a disordered matrix, are calculated using realistic structural models. The…

The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…

In the purpose of expanding the family of two-dimensional materials, we predict the existence of two-dimensional octa-structure of nitrogen group elements that are composed of squares and octagons in first-principle method based on density…

Electron spin resonance data of Cu^{2+} ions in La_{14-x}Ca_{x}Cu_{24}O_{41} crystals (x=9,11,12) reveal a very large width of the resonance line in the paramagnetic state. This signals an unusually strong anisotropy of ~10% of the…

We have obtained velocity-resolved spectra of the H_2 v=1-0 S(1) (lambda = 2.1218 micron) emission line at 2 arcsec angular resolution (or 0.08 pc spatial resolution) in four regions within the central 10 pc of the Galaxy where the…

Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to several potential advantages for a Si:Bi donor electron spin…

We report high-resolution photoemission spectroscopy of newly-discovered iron-based layered superconductor La(O$_{0.93}$F$_{0.07}$)FeAs (Tc = 24 K). We found that the superconducting gap shows a marked deviation from the isotropic s-wave…

Superconductivity in alkali-intercalated iron selenide, with T_c's of 30K and above, may have a different origin than that of the other Fe-based superconductors, since it appears that the Fermi surface does not have any holelike sheets…

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at…

Layered material structures play a key role in enhancing electron-electron interactions to create correlated metallic phases that can transform into unconventional superconducting states. The quasi-two-dimensional electronic properties of…

Owing to the natural compatibility with current semiconductor industry, silicon allotropes with diverse structural and electronic properties provide promising platforms for the next-generation Si-based devices. After screening 230…