相关论文: Contact effects in polymer field-effect transistor…
The contact properties between metal and graphene were examined. The electrical measurement on a multiprobe device with different contact areas revealed that the current flow preferentially entered graphene at the edge of the contact metal.…
The effects of contact-line pinning are well-known in macroscopic systems, but are only just beginning to be explored at the microscale in colloidal suspensions. We use digital holography to capture the fast three-dimensional dynamics of…
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report…
Organic electrode-active materials (OAMs) not only enable a variety of charge and storage mechanisms, but are also safer for the environment and of lower cost compared to materials in commonly used lithium-ion batteries. Cross-linked…
The persistence length of a single, strongly charged, stiff polyelectrolyte chain is investigated theoretically. Path integral formulation is used to obtain the effective electrostatic interaction between the monomers. We find significant…
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…
We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and…
Mixed ionic-electronic conductors host tightly coupled interactions among mobile ions, electronic charges, and the polymer matrix, giving rise to complex multimodal responses spanning electrical, mechanical, and morphological…
The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature,…
We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV)…
The conductance of a point contact between two hopping insulators is expected to be dominated by the individual localized states in its vicinity. Here we study the additional effects due to an external magnetic field. Combined with the…
The objective of this paper is to point out that contact induced states can help explain the structure dependence of the minimum conductivity observed experimentally even if the samples were purely ballistic. Contact induced states are…
Understanding the opto-electronic properties of semiconducting polymers under external strain is essential for their applications in flexible opto-electronic, light-emitting and photovoltaic devices. While prior studies have highlighted the…
Photodiodes are widely used to convert lights into electrical signals. The conventional silicon (Si) based photodiodes boast high photoelectric conversion efficiency and detectivity. However, in general, inorganic-based photodiodes have low…
The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical contacts were generally related to their resistive effect,…
In this work, we clarify the physical mechanism for the phenomenon of negative output differential resistance (NDR) in short-channel graphene FETs (GFETs) through non-equilibrium Green's function (NEGF) simulations and a simpler…
Density functional theory (DFT) and many body perturbation theory at the G$_0$W$_0$ level are employed to study the electronic properties of polythiophene (PT) adsorbed on graphene surface. Analysis of charge density difference shows the…
The internal quantum efficiency (IQE) of an organic photovoltaic device (OPV) is proportional to the number of free charge carriers generated and their conductivity, per absorbed photon. However, both the IQE and the quantities that…
We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs…
The effect of contact architecture, graphene defect density and metal-semiconductor work function difference on resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to…