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We find that the motion of the valley electrons -- electronic states close to the ${\rm K}$ and ${\rm K'}$ points of the Brillouin zone -- is confined into two dimension when the layers of MoS$_{2}$ follow the 3R stacking, while in the 2H…

In a GaAs/AlGaAs two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ring-like structures are observed at even…

介观与纳米尺度物理 · 物理学 2009-11-11 X. C. Zhang , D. R. Faulhaber , H. W. Jiang

We report measurements of the interaction-induced quantum Hall effect in a spin-polarized AlAs two-dimensional electron system where the electrons occupy two in-plane conduction band valleys. Via the application of in-plane strain, we tune…

介观与纳米尺度物理 · 物理学 2007-05-23 Y. P. Shkolnikov , S. Misra , N. C. Bishop , E. P. De Poortere , M. Shayegan

We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field,…

介观与纳米尺度物理 · 物理学 2009-11-13 T. Gokmen , Medini Padmanabhan , M. Shayegan

The two-dimensional electron gas is of fundamental importance in quantum many-body physics. We study a minimal extension of this model with $C_4$ (as opposed to full rotational) symmetry and an electronic dispersion with two valleys with…

强关联电子 · 物理学 2024-08-22 Agnes Valenti , Vladimir Calvera , Steven A. Kivelson , Erez Berg , Sebastian D. Huber

By measuring the angles at which the Landau levels overlap in tilted magnetic fields (the coincidence method), we determine the splitting of the conduction-band valleys in high-mobility two-dimensional (2D) electrons confined to AlAs…

强关联电子 · 物理学 2007-05-23 Y. P. Shkolnikov , E. P. De Poortere , E. Tutuc , M. Shayegan

A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…

介观与纳米尺度物理 · 物理学 2009-11-07 A. R. Goñi , U. Haboeck , C. Thomsen , K. Eberl , F. A. Reboredo , C. R. Proetto , F. Guinea

Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high…

介观与纳米尺度物理 · 物理学 2015-05-18 J. Shabani , Y. Liu , M. Shayegan

Electron-like carriers in bismuth are described by the Dirac Hamiltonian, with a band mass becoming a thousandth of the bare electron mass along one crystalline axis. The existence of three anisotropic valleys offers electrons an additional…

强关联电子 · 物理学 2014-05-01 R. Kuechler , L. Steinke , R. Daou , M. Brando , K. Behnia , F. Steglich

We collect and review works which treat two-dimensional electron gases in quantum wells (mostly GaAs/GaAlAs heterostructures) in the presence of quantizing magnetic fields as open systems in contact with outside reservoirs. If a reservoir…

材料科学 · 物理学 2015-06-16 W. Zawadzki , A. Raymond , M. Kubisa

We study the Land\'e $g$-factor of conduction electrons in the $L$-valley of bulk GaAs and AlAs by using a three-band $\mathbf{k}\cdot\mathbf{p}$ model together with the tight-binding model. We find that the $L$-valley $g$-factor is highly…

材料科学 · 物理学 2008-09-30 K. Shen , M. Q. Weng , M. W. Wu

Oscillations of the real component of AC conductivity $\sigma_1$ in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at $T$=(20-500)~mK. In a wide quantum well,…

介观与纳米尺度物理 · 物理学 2019-09-04 I. L. Drichko , I. Yu. Smirnov , A. V. Suslov , M. O. Nestoklon , D. Kamburov , K. W. Baldwin , L. N. Pfeiffer , K. W. West , L. E. Golub

We calculate using the Boltzmann transport theory the density dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the…

介观与纳米尺度物理 · 物理学 2022-01-25 Seongjin Ahn , Sankar Das Sarma

We report low temperature magnetotransport measurements on a high mobility (\mu=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field data indicate a six-fold valley degenerate system, we observe…

介观与纳米尺度物理 · 物理学 2014-01-29 Tomasz M. Kott , Binhui Hu , S. H. Brown , B. E. Kane

A five-level {\Pp} model of the band structure for GaAs-type semiconductors is used to describe the spin $g^*$-factor and the cyclotron mass $m^*_c$ of conduction electrons in GaAs/Ga$_{1-x}$Al$_x$As quantum wells in an external magnetic…

材料科学 · 物理学 2009-11-11 P. Pfeffer , W. Zawadzki

We study theoretically the effect of an electric field on the electron states and far-infrared optical properties in narrow-gap lead salt quantum wells. The electron states are described by a two-band Hamiltonian. An application of a strong…

介观与纳米尺度物理 · 物理学 2009-10-31 O. E. Raichev , P. Vasilopoulos , F. T. Vasko

We report experimental results on a quantum point contact (QPC) device formed in a wide AlAs quantum well where the two-dimensional electrons occupy two in-plane valleys with elliptical Fermi contours. To probe the closely-spaced,…

介观与纳米尺度物理 · 物理学 2009-11-11 O. Gunawan , B. Habib , E. P. De Poortere , M. Shayegan

We report on the achievement of a two-dimensional electron gas in completely undoped In[0.75]Al[0.25]As/In[0.75]Ga[0.25]As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to…

材料科学 · 物理学 2009-11-10 F. Capotondi , G. Biasiol , I. Vobornik , L. Sorba , F. Giazotto , A. Cavallini , B. Fraboni

Thanks to their multi-valley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic…

介观与纳米尺度物理 · 物理学 2021-06-21 Yoon Jang Chung , K. W. Baldwin , K. W. West , D. Kamburov , M. Shayegan , L. N. Pfeiffer

This paper details a complete formalism for calculating electron subband energy and degeneracy in strained multi-valley quantum wells grown along any orientation with explicit results for the AlAs quantum well case. A standardized rotation…

介观与纳米尺度物理 · 物理学 2013-05-29 S. Prabhu-Gaunkar , S. Birner , S. Dasgupta , C. Knaak , M. Grayson