相关论文: Valley susceptibility of an interacting two-dimens…
Measurements on a two-dimensional electron system confined to an AlAs quantum well reveal that for a given electron density the valley susceptibility, defined as the change in valley population difference per unit strain, is enhanced as the…
We report measurements of the spin susceptibility, $\chi\propto g_v g^*m^*$, in an AlAs two-dimensional electron system where, via the application of in-plane stress, we transfer electrons from one conduction-band valley to another ($g_v$…
We report measurements of the spin susceptibility in dilute (rs up to 10) AlAs two-dimensional (2D) electrons occupying a single conduction-band valley with an anisotropic in-plane Fermi contour, characterized by longitudinal and transverse…
We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45$\AA$ wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to…
We measure the effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we change the conduction-band valley occupation and the spin polarization via the application of strain and magnetic field,…
We measure the renormalized effective mass (m*) of interacting two-dimensional electrons confined to an AlAs quantum well while we control their distribution between two spin and two valley subbands. We observe a marked contrast between the…
We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies…
We determine the spin susceptibility in a two dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2$\times10^{9}$cm$^{-2}$ to 4$\times10^{10}$cm$^{-2}$. Our data can be fitted to an equation that describes the…
We find that the spin susceptibility of a two-dimensional electron system with valley degeneracy does not grow critically at low densities, at variance with experimental results [A. Shashkin et al., Phys. Rev. Lett. 96, 036403 (2006)]. We…
We have realized an AlAs two-dimensional electron system in which electrons occupy conduction-band valleys with different Fermi contours and effective masses. In the quantum Hall regime, we observe both resistivity spikes and persistent…
The spin susceptibility of a two-dimensional electron system is calculated by determining the spin-polarization dependence of the ground-state energy within the self-consistent mean-field theory of Singwi et al. (STLS). Results are…
We determine the spin susceptibility $\chi$ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully…
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…
In two-dimensional electron systems confined to wide AlAs quantum wells, composite fermions around the filling factor $\nu$ = 3/2 are fully spin polarized but possess a valley degree of freedom. Here we measure the energy needed to…
We report the detailed study of the influence of the spin and valley splittings on such physical observables of the two-dimensional disordered electron liquid as resistivity, spin and valley susceptibilities. We explain qualitatively the…
We calculate the valley degeneracy ($g_v$) dependence of the many-body renormalization of quasiparticle properties in multivalley 2D semiconductor structures due to the Coulomb interaction between the carriers. Quite unexpectedly, the $g_v$…
By measuring the angles at which the Landau levels overlap in tilted magnetic fields (the coincidence method), we determine the splitting of the conduction-band valleys in high-mobility two-dimensional (2D) electrons confined to AlAs…
In a number of widely-studied materials, such as Si, AlAs, Bi, graphene, MoS2, and many transition metal dichalcogenide monolayers, electrons acquire an additional, spin-like degree of freedom at the degenerate conduction band minima, also…
We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the…
Motivated by recent experimental reports, we carry out a Fermi liquid many-body calculation of the interaction induced renormalization of the spin susceptibility and effective mass in realistic two dimensional (2D) electron systems as a…