相关论文: Ab initio study of single molecular transistor mod…

A class of bistable "stator-rotor" molecules is proposed, where a stationary bridge (stator) connects the two electrodes and facilitates electron transport between them. The rotor part, which has a large dipole moment, is attached to an…

This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded…

Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…

The atomtronic matter-wave triple-well transistor is theoretically predicted to exhibit current gain and act as a coherent matter-wave emitter. In this work, we investigate the dynamics of an atomtronic transistor composed of a triple-well…

Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…

In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI)…

An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…

Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…

Electrostatically Formed Nanowire (EFN) based transistors have been suggested in the past as gas sensing devices. These transistors are multiple gate transistors in which the source to drain conduction path is determined by the bias applied…

We present an experimental and theoretical study of a magnetic single-molecule transistor based on N@C60 connected to gold electrodes. Particular attention is paid to the regime of intermediate molecule-lead coupling, where cotunneling…

Semiconductor transistors are essential elements of electronic circuits as they enable, for example, the isolation or amplification of voltage signals. While conventional transistors are point-type (lumped-element) devices, it may be highly…

We study possibilities to suppress the transverse modulational instability (MI) of dark-soliton stripes in two-dimensional (2D) Bose-Einstein condensates (BECs) and self-defocusing bulk optical waveguides by means of quasi-1D structures.…

For a strongly correlated material, VO2, near a critical on-site Coulomb energy U/Uc=1, the abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT is observed by inducing internal optical phonon-coupled holes…

When thinned down to the atomic scale, many layered van der Waals materials exhibit an interesting evolution of their electronic properties, whose main aspects can be accounted for by changes in the single-particle band structure. Phenomena…

We investigate transport properties of molecular junctions under two types of bias--a short time pulse or an AC bias--by combining a solution for the Green functions in the time domain with electronic structure information coming from ab…

Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced…

We calculate the response of a molecular magnet subject to a time-varying magnetic field and coupled to a heat bath. We propose that observations of calculated oscillations transverse to the field direction may be an effective way of…

A novel scanning tunneling microscope manipulation scheme for a controlled molecular transport of weakly adsorbed molecules is demonstrated. Single sexiphenyl molecules adsorbed on a Ag(111) surface at 6 K are shot towards single…

The concept of a magnetic bipolar transistor (MBT) is introduced. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin…