中文
相关论文

相关论文: Ab initio study of single molecular transistor mod…

200 篇论文

We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control…

超导电性 · 物理学 2017-03-08 B. Lei , N. Z. Wang , C. Shang , F. B. Meng , L. K. Ma , X. G. Luo , T. Wu , Z. Sun , Y. Wang , Z. Jiang , B. H. Mao , Z. Liu , Y. J. Yu , Y. B. Zhang , X. H. Chen

Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…

介观与纳米尺度物理 · 物理学 2019-04-23 Marta Perucchini , Enrique G. Marin , Damiano Marian , Giuseppe Iannaccone , Gianluca Fiori

Motivated by recent progress in employing two key classes of two-dimensional materials-topological insulators and transition-metal dichalcogenides (TMDCs)-as spin sources for generating spin-orbit torque (SOT), we investigate…

介观与纳米尺度物理 · 物理学 2025-08-01 Leyla Majidi , Azadeh Faridi , Reza Asgari

The transient tunneling current of single electron transistors (SETs) is theoretically investigated. The time-dependent current formula given by Jauho, Wingreen and Meir [Phys. Rev. B 50, 5528 (1994)] is applied to study the temperature…

介观与纳米尺度物理 · 物理学 2007-05-23 David M. -T. Kuo , Pei-Wen Li , W. T. Lai

We study all-carbon-hydrogen molecular transistors where zigzag graphene nanoribbons play the role of three metallic electrodes connected to a ring-shaped 18-annulene molecule. Using the nonequilibrium Green function formalism combined with…

介观与纳米尺度物理 · 物理学 2010-12-02 Kamal K. Saha , Branislav K. Nikolic , Vincent Meunier , Wenchang Lu , J. Bernholc

By operating the radio frequency single electron transistor (rf-SET) as a mixer we present measurements in which the RC roll-off of the tunnel junctions is observed at high frequencies. Our technique makes use of the non-linear rf-SET…

介观与纳米尺度物理 · 物理学 2015-06-24 D. J. Reilly , T. M. Buehler

Azophenine has previously been identified as a controllable molecular switch when deposited on a Cu(110) surface, where it can be in two symmetry-equivalent states. Each of the two states can be set as well as read by means of a scanning…

原子与分子团簇 · 物理学 2018-01-04 Herbert Fruchtl , Tanja van Mourik

Single-molecule transistors provide a unique experimental tool to investigate the coupling between charge transport and the molecular degrees of freedom in individual molecules. One interesting class of molecules for such experiments are…

Single-electron transistors have been proposed to be used as a read-out device for Cooper pair charge qubits. Here we show that a coupled superconducting transistor at a threshold voltage is much more effective in measuring the state of a…

超导电性 · 物理学 2009-11-07 J. Kinnunen , P. Torma , J. P. Pekola

In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays…

Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical…

介观与纳米尺度物理 · 物理学 2009-11-13 J. J. Henderson , C. M. Ramsey , E. del Barco , A. Mishra , G. Christou

Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the…

In this work we theoretically study steady state thermoelectric transport through a single-molecule junction with a long chain-like bridge. Electron transmission through the system is computed using a tight-binding model for the bridge. We…

介观与纳米尺度物理 · 物理学 2018-03-02 Natalya A. Zimbovskaya , Abraham Nitzan

In this review, we present an overview of four proof-of-concept of single-atom transistors based on four technologies : Atom doping, Single electron transistors, Single-atom metallic wire and Multilevel atomic-scale switching. Techniques…

介观与纳米尺度物理 · 物理学 2017-03-20 Huu Chuong Nguyen , Maurice Retout , Gildas Lepennetier

Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device…

Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region…

应用物理 · 物理学 2025-06-11 Ramisa Fariha , Saikat Das , Labiba Tanjil Nida , Abeer Khan , Md Tashfiq Bin Kashem

A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…

介观与纳米尺度物理 · 物理学 2009-11-11 M. Hofheinz , X. Jehl , M. Sanquer , G. Molas , M. Vinet , S. Deleonibus

The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to…

介观与纳米尺度物理 · 物理学 2016-06-15 V. Tayari , N. Hemsworth , O. Cyr-Choinière , W. Dickerson , G. Gervais , T. Szkopek

The dynamics of a generic class of scalar active matter exhibiting a diffusivity edge is studied in a confining potential where the amplitude is governed by a time-dependent protocol. For such non-equilibrium systems, the diffusion…

统计力学 · 物理学 2024-04-18 Jonas Berx

Computational methods are fast becoming an integral part of nanoelectronics design process. With increasing computational power, electron transport simulation methods such as Non-equilibrium Greens function (NEGF) methods now hold promise…

材料科学 · 物理学 2021-09-28 A. Ramazani , F. Shayeganfar , V. Sundararaghavan , Nicholas Xuanlai Fang
‹ 上一页 1 8 9 10 下一页 ›