相关论文: Ab initio study of single molecular transistor mod…
Many types of molecular motors have been proposed and synthesized in recent years, displaying different kinds of motion, and fueled by different driving forces such as light, heat, or chemical reactions. We propose a new type of molecular…
Combined diverse two-dimensional (2D) materials for semiconductor interfaces are attractive for electrically controllable carrier confinement to enable excellent electrostatic control. We investigated the transport characteristic in…
Optically trapped polar molecules are promising for quantum information processing, yet the accuracy of an entangling molecular gate is limited by the uncertainty of dipole-dipole interactions~(DDI) from the molecular motion in traps. We…
The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables a variety of different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the…
We report transport measurements through a single-molecule magnet, the Mn12 derivative [Mn12O12(O2C-C6H4-SAc)16(H2O)4], in a single-molecule transistor geometry. Thiol groups connect the molecule to gold electrodes that are fabricated by…
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…
Gate-tunable transmon qubits are based on quantum conductors used as weak links within hybrid Josephson junctions. These gatemons have been implemented in just a handful of systems, all relying on extended conductors, namely epitaxial…
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract…
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top…
Continued progress in high speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two terminal device…
In the last several years considerable efforts have been devoted to developing Bose-Einstein Condensate (BEC)-based devices for applications such as fundamental research, precision measurements and integrated atom optics. Such devices…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
We proposed a scheme to realize a controlled-NOT quantum logic gate in a dimer of exchange coupled single-molecule magnets, $[\textrm{Mn}_4]_2$. We chosen the ground state and the three low-lying excited states of a dimer in a finite…
A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain…
Due to their remarkable properties, systems that exhibit self-organization of their components resulting from intrinsic microscopic activity have been extensively studied in the last two decades. In a generic class of active matter, the…
We theoretically investigate spin dependent transport in ferromagnetic/normal metal/ferromagnetic single electron transistors by applying master equation calculations using a two dimensional space of states involving spin and charge degrees…
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an…
A small scale bipolar transistor with polysilicon emitter will, depending on the emitter window size, display suppression of the hole tramsport due to single electron effects. In this paper the resulting base current suppression is computed…
Two qubit gates constitute fundamental building blocks in the realization of large-scale quantum devices. Using superconducting circuits, two-qubit gates have previously been implemented in different ways with each method aiming to maximize…
We present a self-consistent method for the evaluation of the electronic current flowing through a multi-terminal molecular wire. The method is based on Buttiker- Landauer theory which relates the current to one-electron scattering…