相关论文: Current-driven magnetization switching in CoFeB/Mg…
We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
We report direct experimental evidence of room temperature spin filtering in magnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers via tunneling magnetoresistance (TMR) measurements.…
We investigate the tunneling magnetoresistance in magnetic tunnel junctions (MTJs) comprised of Weyl semimetal contacts. We show that chirality-magnetization locking leads to a gigantic tunneling magnetoresistance ratio, an effect that does…
We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is…
We use pulsed inductive microwave magnetometry to study the precessional magnetization dynamics of the free layer in CoFeB/MgO/CoFeB based magnetic tunnelling junction stacks with varying MgO barrier thickness. From the field dependence of…
We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height of AlMnAs with respect to the Fermi level of GaMnAs is…
We report on the low frequency (LF) noise measurements in magnetic tunnel junctions (MTJs) below 4 K and at low bias, where the transport is strongly affected by scattering with magnons emitted by hot tunnelling electrons, as thermal…
We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS…
The magnetic tunnel junctions (MTJ) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that spin polarization is well maintained during transport,…
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of…
Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in…
Magnetic tunnel junctions (MTJs) have been widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) nature of two-dimensional (2D) magnets with…
We studied the c-axis transport of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (Bi2212) cross-whisker junctions formed by annealing ``naturally'' formed whisker junctions. These frequently appear during growth when the $ab$-faces of neighboring…
The DC magnetization and AC complex magnetic susceptibilities were measured for MgB2 single crystals, unsubstituted and carbon substituted with the composition of Mg(B_0.94C_0.06)2. The measurements were performed in AC and DC magnetic…
Magnetic tunnel junctions (MTJ) have been grown by using molecular beam epitaxy on c-plane Al2O3 substrates. The MTJ stacks consist of two ferromagnetic hcp-Co layers separated by a thin insulating h-BN barrier. The samples have been grown…