相关论文: Scaling issues for AlGaN/GaN HEMTs: performance op…

Spin-based metal-oxide-semiconductor field-effect transistors (MOSFET) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The…

In the presence of shot noise the charge on a mesoscopic conductor fluctuates. We are interested in the charge fluctuations which arise if the conductor is in the proximity of a gate to which it is coupled by long range Coulomb forces only.…

The scattering effects are studied in nanometer-scaled double-gate MOSFET, using Monte Carlo simulation. The non-equilibrium transport in the channel is analyzed with the help of the spectroscopy of the number of scatterings experienced by…

An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF…

Different techniques of event biasing have been implemented in the particle-based Monte Carlo simulations of a 15nm n-channel MOSFET. The primary goal is to achieve enhancement in the channel statistics and faster convergence in the…

We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics…

The electronic circulator, and its close relative the gyrator, are invaluable tools for noise management and signal routing in the current generation of low-temperature microwave systems for the implementation of new quantum technologies.…

The trench gate MOSFET has established itself as the most suitable power device for low to medium power applications by offering the lowest possible ON resistance among all MOS devices. The evolution of the trench gate power MOSFET has been…

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…

Thermal transport in high-electron-mobility-transistor (HEMT) structures grown on 4H-SiC substrates by metalorganic-vapour-phase epitaxy (MOCVD) is systematically investigated. The thermal conductivity of the GaN channel and AlN buffer…

We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…

In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI)…

Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding…

Characterizing long-range electric fields and built-in potentials in functional materials at nano- to micrometer scales is of supreme importance for optimizing devices. E.g., the functionality of semiconductor heterostructures or battery…

We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with…

Scaling up quantum computing hardware is hindered by the narrow operating margins of current quantum components. Here, we introduce a composite qubit and gate scheme that achieves wide margins by use of transistor-like nonlinearities to…

Detailed experimental studies of the conductance of mesoscopic GaAs devices in the few-mode regime reveal a novel thermal effect: for temperatures up to at least 10 K the measured gate characteristics, i.e. conductance $G$ versus gate…

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and…

Vertical field effect transistors (VFETs) show many advantages such as high switching speed, low operating voltage, low power consumption, and miniaturization over lateral FETs. However, VFET still faces the main challenges of high…

We present a novel electronic-structure modulation transistor (EMT), which can possibly be used for post-CMOS logic applications. The device principle is based on the bandwidth modulation of a midgap or near-midgap localized state in the…