相关论文: Scaling issues for AlGaN/GaN HEMTs: performance op…
Design considerations for a below 100 nm channel length SOI MOSFET with electrically induced shallow source/drain junctions are presented. Our simulation results demonstrate that the application of induced source/drain extensions to the SOI…
We explore the chiral transmission of electrons across graphene heterojunctions for electronic switching using gate geometry alone. A sequence of gates is used to collimate and orthogonalize the chiral transmission lobes across multiple…
We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show…
This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the…
Thermoelectric (TE) generators can directly convert heat into electricity, but their performance is often constrained by limited temperature gradients. Here it is shown that width-modulated metamaterials with constrictions and expansions…
When two separately contacted quantum Hall (QH) edge channels are brought into interaction, they can equilibrate their imbalance via scattering processes. In the present work we use a tunable QH circuit to implement a junction between…
The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with…
The two-dimensional (2D) homogeneous electron gas (HEG) is a fundamental model in quantum many-body physics. It is important to theoretical and computational studies, where exchange-correlation energies computed in it serve as the…
Schottky barrier height and the ideality factor $\eta$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading…
A physics-based compact model for silicon gate-all-around (GAA) nanowire tunneling FETs (NW-tFETs) with good accuracy has been developed by considering Phonon-Assisted Tunneling (PAT) and transition from Quantum Capacitance Limit (QCL) to…
A deep understanding of the correlation between electronic and mechanical degrees of freedom is crucial to the development of quantum devices in a nanoelectromechanical system (NEMS). In this work, we first establish a fully quantum…
We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is…
Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec. However, the high carrier density in the superlattice source…
Electric-field-controlled charge transport is a key concept of modern computers, embodied namely in field effect transistors. The metallic gate voltage controls charge population, thus it is possible to define logical elements which are the…
Stimulated by the recent implementation of a three-port Hall-effect microwave circulator of Mahoney et al. (MEA), we present model studies of the performance of this device. Our calculations are based on the capacitive-coupling model of…
In this work, targeting, e.g., future generation cellular, microwave-links, or optical fiber systems, we propose a new geometric shaping design for golden angle modulation (GAM) based on a (double) truncated Gaussian input distribution. The…
Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer…
Low frequency AC-measurements are commonly used to determine the voltage and currents through mesoscopic devices. We calculate the effect of the alternating Hall voltage on the recorded time-averaged voltage in the presence of a top-gate…
Thermally activated sub-threshold transport has been investigated in undoped triple gate MOSFETs. The evolution of the barrier height and of the active cross-section area of the channel as a function of gate voltage has been determined. The…
We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration.…