相关论文: Low frequency noise statistics for the breakdown c…
The degradation of ultrathin oxide layers in the presence of a stress voltage is modeled in terms of two antagonist percolation processes taking place in a random resistor network. The resistance and leakage current fluctuations are studied…
Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency…
Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits. This problem is related to the successive captures and emissions of electrons at…
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…
We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise…
A study of the conductance noise in a two-dimensional electron system (2DES) in Si at low temperatures (T) reveals the onset of large, non-Gaussian noise after cooling from an equilibrium state at a high T with a fixed carrier density n_s.…
This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance…
The fully self-consistent non-equilibrium Green functions (NEGFs) approach to the quantum transport is developed for the investigation of one-dimensional nano-scale devices. Numerical calculations performed for resonant tunneling diodes…
We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer…
Low frequency electrical noise measurements have been used to probe the electronic state of the perovskite-type manganese oxide Pr2/3Ca1/3MnO3 versus temperature and in the vicinity of the field-induced transition from the insulating,…
The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute…
We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. A special attention was given to determining the dominant noise sources in…
An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external…
This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…
Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of…
An analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance Gp and oxide trapped charge noise SQt at the SiO2/Si…
Recent experiments indicate a connection between the low- and high-frequency noise affecting superconducting quantum systems. We explore the possibilities that both noises can be produced by one ensemble of microscopic modes, made up, e.g.,…
Driven non-equilibrium structural phase transformation has been probed using time varying resistance fluctuations or noise. We demonstrate that the non-Gaussian component (NGC) of noise obtained by evaluating the higher order statistics of…
It is well established that the subgap conductivity through a normal-metal-insulator-superconductor (NIS) tunnel junction is strongly affected by interference of electron waves scattered by impurities. In this paper we investigate how the…
Although time-independent models provide very useful dynamical information with a reduced computational burden, going beyond the quasi-static approximation provides enriched information when dealing with TeraHertz (THz) frequencies. In this…