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相关论文: Orbital selective Mott transition in multi-band sy…

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We study a three-orbital Hubbard model with negative Hund coupling in infinite dimensions, combining dynamical mean-field theory with continuous time quantum Monte Carlo simulations. This model, which is relevant for the description of…

超导电性 · 物理学 2018-12-13 Kosuke Ishigaki , Joji Nasu , Akihisa Koga , Shintaro Hoshino , Philipp Werner

Electrons in a simple correlated system behave either as itinerant charge carriers or as localized moments. However, there is growing evidence for the coexistence of itinerant electrons and local moments in transition metals with nearly…

强关联电子 · 物理学 2011-04-12 M. Neupane , P. Richard , Z. -H. Pan , Y. Xu , R. Jin , D. Mandrus , X. Dai , Z. Fang , Z. Wang , H. Ding

In this paper, we develop a new type of slave particle method which is similar to the slave rotor model except that the quantum rotor is substituted by a spin one slave particle. The spin-one slave particle itself can be represented in…

强关联电子 · 物理学 2011-12-02 Masoud Mardani , Mohammad-Sadegh Vaezi , Abolhassan Vaezi

Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…

材料科学 · 物理学 2018-11-14 L. Craco , M. S. Laad , S. Leoni

We have investigated the half-filling two-orbital Hubbard model on a triangular lattice by means of the dynamical mean-field theory (DMFT). The densities of states and optical conductivity clearly show the occurence of metal-insulating…

强关联电子 · 物理学 2008-08-27 Feng Lu , Wei-Hua Wang , Liang-Jian Zou

Interaction-driven metal-insulator transitions or Mott transitions are widely observed in condensed-matter systems. In multi-orbital systems, many-body physics is richer in which an orbital-selective metal-insulator transition is an…

强关联电子 · 物理学 2018-11-09 Hanghui Chen

We investigate the Mott transition in the anisotropic kagom\'e lattice Hubbard model using the cellular dynamical mean field theory combined with continuous-time quantum Monte Carlo simulations. By calculating the double occupancy and the…

强关联电子 · 物理学 2015-05-19 Yuta Furukawa , Takuma Ohashi , Yohta Koyama , Norio Kawakami

We investigate the ground-state properties of the one-dimensional two-band Hubbard model with different bandwidths. The density-matrix renormalization group method is applied to calculate the averaged electron occupancies $n$ as a function…

强关联电子 · 物理学 2009-11-13 S. Miyashita , Y. Yamashita , K. Yonemitsu , A. Koga , N. Kawakami

Mott transition plays a key role in strongly correlated physics but its nature is not yet fully understood. Motivated by recent development of Schwinger boson approach for the Kondo lattice, we propose in this work a novel slave fermion…

强关联电子 · 物理学 2022-11-18 Zhuoqing Long , Jiangfan Wang , Yi-feng Yang

The question if a Mott insulator and a band insulator are fundamentally different has been the matter of intensive research recently. Here we consider a simple model which allows by tuning one parameter to go continously from a Mott…

强关联电子 · 物理学 2009-11-11 Andreas Fuhrmann , David Heilmann , Hartmut Monien

The infinite dimensional half-filled Hubbard model can be mapped exactly with no additional constraint onto a model of free fermions coupled in a $Z_2$ gauge-invariant manner to auxiliary Ising spins in a transverse field. In this…

强关联电子 · 物理学 2016-01-20 Rok Zitko , Michele Fabrizio

The spectrum of the strongly correlated systems usually shows resonant peaks at finite energy, with examples in the 115 Ce family which are reproduced by the dynamical mean-field theory. A similar structure has been seen recently in the…

强关联电子 · 物理学 2019-04-02 Yashar Komijani , Karen Hallberg , Gabriel Kotliar

We develop here a general formalism for multi-orbital Mott systems which can be used to understand dynamical and static spectral weight transfer. We find that the spectral weight transferred from the high energy scales is greatly increased…

强关联电子 · 物理学 2011-09-08 Wei-Cheng Lee , Philip W. Phillips

A slave-boson functional-integral method has been developed for the Hubbard model with arbitrary, orbital degeneracy $D$. Its saddle-point mean-field theory is equivalent to the Gutzwiller approximation, as in the case of single-band…

强关联电子 · 物理学 2009-10-28 Hideo Hasegawa

The ionic Hubbard model is investigated at half filling at zero temperature. We apply the cellular dynamical mean-field theory to the one-dimensional ionic Hubbard model to compute local quantities such as double occupancy and staggered…

强关联电子 · 物理学 2011-11-07 Ara Go , Gun Sang Jeon

We study Mott insulator - superfluid transition in a two-band boson Hubbard model, which can be mapped onto a spin-1/2 XY model with spins coupled to an additional Ising degree of freedom. By using a modified mean field theory that include…

统计力学 · 物理学 2009-11-13 Huai-Bin Zhuang , Michael Ma , Xi Dai , Fu-Chun Zhang

The dynamical mean-field theory (DMFT) is employed to study the Mott transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice and…

强关联电子 · 物理学 2016-08-31 M. Potthoff , W. Nolting

The localization-delocalization transition is at the heart of strong correlation physics. Recently, there is great interest in multiorbital systems where this transition can be restricted to certain orbitals, leading to an orbital-selective…

强关联电子 · 物理学 2022-08-24 Fabian B. Kugler , Gabriel Kotliar

Inspired by recent experiments on 3He films between one and two atoms thick, we consider a bilayer Hubbard model on a triangular lattice. Our results are obtained in the framework of a cluster dynamical mean-field calculation with a quantum…

强关联电子 · 物理学 2011-04-14 K. S. D. Beach , F. F. Assaad

Quantum materials whose properties lie beyond the celebrated Landau Fermi-liquid paradigm have been observed for decades across diverse material platforms. Finding microscopic lattice models for metallic states that exhibit such peculiar…

强关联电子 · 物理学 2026-02-25 Fabian Eickhoff