中文
相关论文

相关论文: Orbital selective Mott transition in multi-band sy…

200 篇论文

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

A detailed comparison of QMC/DMFT results for the non-isotropic two-band Hubbard model by Liebsch [Phys. Rev. B 70, 165103 (2004)] and C. Knecht, N. Bluemer, and P. G. J. van Dongen [cond-mat/0505106 (submitted to Phys. Rev. Lett.)] is…

强关联电子 · 物理学 2007-05-23 A. Liebsch

We study the continuous bandwidth-controlled Mott transition in the two-dimensional single-band Hubbard model with a focus on the critical scaling behavior of charge and spin degrees of freedom. Using plaquette cluster dynamical mean-field…

强关联电子 · 物理学 2011-10-31 Michael Sentef , Philipp Werner , Emanuel Gull , Arno P. Kampf

We study a bandwidth controlled Mott metal-insulator transition (MIT) between a Fermi liquid metal and a quantum spin-liquid insulator at half-filling in three dimensions (3D). Using a slave rotor approach, and incorporating gauge field…

强关联电子 · 物理学 2013-05-29 Daniel Podolsky , Arun Paramekanti , Yong Baek Kim , T. Senthil

We investigate a two-orbital Anderson lattice model with Ising orbital intersite exchange interactions by means of dynamical mean field theory combined with the static mean field approximation of the intersite orbital interactions. Focusing…

强关联电子 · 物理学 2015-05-19 Kazumasa Hattori

We show that the Mott transition occurring in bosonic Hubbard models can be successfully described by a simple variational wave function that contains all important long-wavelength correlations. Within this approach, a smooth…

强关联电子 · 物理学 2007-05-23 Manuela Capello , Federico Becca , Michele Fabrizio , Sandro Sorella

Studies on the iron-based superconductors and related strongly correlated systems have focused attention on bad-metal normal state in proximity to antiferromagnetic order. An orbital-selective Mott phase (OSMP) has been extensively…

强关联电子 · 物理学 2022-03-14 Haoyu Hu , Lei Chen , Jian-Xin Zhu , Rong Yu , Qimiao Si

We study the binding of a holon to a doublon in a half-filled Hubbard model as the mechanism of the zero-temperature metal-insulator transition. In a spin polarized system and a non-bipartite lattice a single holon-doublon (HD) pair…

强关联电子 · 物理学 2016-01-06 Peter Prelovšek , Jure Kokalj , Zala Lenarčič , Ross H. McKenzie

A repulsive Coulomb interaction between electrons in different orbitals in correlated materials can give rise to bound quasiparticle states. We study the non-hybridized two-orbital Hubbard model with intra (inter)-orbital interaction $U$…

强关联电子 · 物理学 2018-04-04 Y. Nunez-Fernandez , G. Kotliar , K. Hallberg

Dynamics of magnetic moments near the Mott metal-insulator transition is investigated by a combined slave-rotor and Dynamical Mean-Field Theory solution of the Hubbard model with additional fully-frustrated random Heisenberg couplings. In…

强关联电子 · 物理学 2013-07-15 Serge Florens , Priyanka Mohan , C. Janani , T. Gupta , R. Narayanan

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

We show that the Mott transition can be realized in a holographic model of a fermion with bulk mass, $m$, and a dipole interaction of coupling strength $p$. The phase diagram contains gapless, pseudo-gap and gapped phases and the first one…

高能物理 - 理论 · 物理学 2018-08-29 Yunseok Seo , Geunho Song , Yong-Hui Qi , Sang-Jin Sin

Hund's rule coupling ($\textit{J}$) has attracted much attention recently for its role in the description of the novel quantum phases of multi orbital materials. Depending on the orbital occupancy, $\textit{J}$ can lead to various…

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO$_{2}$. We have used soft-x-ray absorption spectroscopy at the V $L_{2,3}$ edges as a sensitive local probe, and…

Metal-insulator transitions in a three-component Falicov-Kimball model are investigated within the Kotliar-Ruckenstein slave boson mean-field approach. The model describes a mixture of two interacting fermion atom species loaded into an…

强关联电子 · 物理学 2015-12-09 Duc-Anh Le , Minh-Tien Tran

We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential $\Delta$, the so-called ionic Hubbard model, using cluster dynamical mean field theory. We…

强关联电子 · 物理学 2015-06-25 S. S. Kancharla , E. Dagotto

We study a multiorbital model for the alkaline iron selenides K(1-x)Fe(2-y)Se2 using a slave-spin method. With or without ordered vacancies, we identify a metal-to-Mott-insulator transition at the commensurate filling of six 3d electrons…

强关联电子 · 物理学 2013-04-22 Rong Yu , Qimiao Si

Effects of the electron-electron interaction in the two-dimensional flux phase are investigated. We treat the half-filled Hubbard model with a magnetic flux $\pi$ per plaquette by the quantum Monte Carlo method. When the interaction is…

强关联电子 · 物理学 2009-11-07 Y. Otsuka , Y. Hatsugai

Strongly correlated metals close to the Mott transition display unusual transport regimes, together with large spectral weight transfers in optics and photoemission. We briefly review the theoretical understanding of these effects, based on…

强关联电子 · 物理学 2009-11-10 A. Georges , S. Florens , T. A. Costi

We present a detailed account of the physics of Vanadium sesquioxide (${\rm V_2O_3}$), a benchmark system for studying correlation induced metal-insulator transition(s). Based on a detailed perusal of a wide range of experimental data, we…

强关联电子 · 物理学 2009-11-11 M. S. Laad , L. Craco , E. Müller-Hartmann
‹ 上一页 1 8 9 10 下一页 ›