中文
相关论文

相关论文: Orbital selective Mott transition in multi-band sy…

200 篇论文

The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…

强关联电子 · 物理学 2009-11-13 S. S. Kancharla , S. Okamoto

We investigate the metal-to-insulator phase transition driven by the density-density electronic interaction in the quarter-filled model on a cubic lattice with two orbitals split by a crystal field. We show that a systematic consideration…

强关联电子 · 物理学 2023-05-30 M. Vandelli , J. Kaufmann , V. Harkov , A. I. Lichtenstein , K. Held , E. A. Stepanov

High-resolution angle-resolved photoemission (ARPES) data show that a metal-insulator Mott transition occurs at the surface of the quasi-two dimensional compound TaSe$_2$. The transition is driven by the narrowing of the Ta $5d$ band…

强关联电子 · 物理学 2009-11-07 L. Perfetti , A. Georges , S. Florens , S. Biermann , S. Mitrovic , Y. Tomm , H. Höchst , M. Grioni

We expose the relevance of double occupancy conservation symmetry in application of the Hubbard-I approach to strongly correlated electron systems. We propose the utility of a composite method, viz. the Hubbard-I method in conjunction with…

强关联电子 · 物理学 2013-01-10 Przemyslaw R. Grzybowski , Ravindra W. Chhajlany

In real transition-metal oxides, the so-called GdFeO3 octahedral tilt is long known to be a relevant control parameter influencing the range of orbital and magnetic ordered states found across families of cubic perovskite families. Their…

强关联电子 · 物理学 2015-10-16 Mukul S. Laad , S. Koley , A. Taraphder

Spectral properties of the two-dimensional Hubbard model near the Mott transition are investigated by using cluster perturbation theory. The Mott transition is characterized by freezing of the charge degrees of freedom in a single-particle…

强关联电子 · 物理学 2012-02-28 Masanori Kohno

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

Multiorbital interactions have the capacity to produce an interesting kind of doublon-holon bound state that consists of a single-hole state in one band and a doubly-occupied state in another band. Interband doublon-holon pair excitations…

强关联电子 · 物理学 2019-09-04 Yuekun Niu , Jian Sun , Yu Ni , Jingyi Liu , Yun Song , Shiping Feng

We apply the approximate analytic methods to the investigation of the band structure of the asymmetric Hubbard model where the chemical potentials and electron transfer parameters depend on the electron spin (type of quasiparticles). The…

强关联电子 · 物理学 2009-11-11 Ihor V. Stasyuk , Orest B. Hera

Spin-liquid behavior was recently suggested experimentally in the moderately one-dimensional organic compound $\kappa$-H$_3$(Cat-EDT-TTF)$_2$. This compound can be modeled by the one-band Hubbard model on the anisotropic triangular lattice…

强关联电子 · 物理学 2016-12-28 S. Acheche , A. Reymbaut , M. Charlebois , D. Sénéchal , A. -M. S. Tremblay

The experimentally established phase diagram of the half-filled Hubbard model features the existence of three distinct finite-temperature regimes, separated by extended crossover regions. A number of crossover lines can be defined to span…

强关联电子 · 物理学 2013-08-29 J. Vucicevic , H. Terletska , D. Tanaskovic , V. Dobrosavljevic

The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…

凝聚态物理 · 物理学 2009-11-10 Arata Tanaka

A new slave-spin representation of fermion operators has recently been proposed for the half-filled Hubbard model. We show that with the addition of a gauge variable, the formalism can be extended to finite doping. The resulting spin…

强关联电子 · 物理学 2011-01-04 S. R. Hassan , L. de' Medici

Within dynamical mean-field theory, we study the metal-insulator transition of a twofold orbitally degenerate Hubbard model as a function of a splitting \Delta of the degeneracy. The phase diagram in the U-\Delta plane exhibits two-band and…

强关联电子 · 物理学 2009-11-07 Nicola Manini , Giuseppe E. Santoro , Andrea Dal Corso , Erio Tosatti

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

The microscopic mechanism of the metal-insulator transition is studied by orbital-resolved 51V NMR spectroscopy in a prototype of the quasi-one-dimensional system V6O13. We uncover that the transition involves a site-selective d orbital…

强关联电子 · 物理学 2015-04-24 Yasuhiro Shimizu , Satoshi Aoyama , Takaaki Jinno , Masayuki Itoh , Yutaka Ueda

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

Orbital differentiation is a common theme in multiorbital systems, yet a complete understanding of it is still missing. Here, we consider a minimal model for orbital differentiation in Hund metals with a highly accurate method: We use the…

强关联电子 · 物理学 2020-01-08 Fabian B. Kugler , Seung-Sup B. Lee , Andreas Weichselbaum , Gabriel Kotliar , Jan von Delft

The Mott-Hubbard metal-insulator transition is investigated in a two-band Hubbard model within dynamical mean-field theory. To this end, we use a suitable extension of Wilson's numerical renormalization group for the solution of the…

强关联电子 · 物理学 2009-11-10 Thomas Pruschke , Ralf Bulla

The density driven Mott transition is studied by means of Dynamical Mean-Field Theory in the Hubbard-Holstein model, where the Hubbard term leading to the Mott transition is supplemented by an electron-phonon (e-ph) term. We show that an…

强关联电子 · 物理学 2007-08-07 M. Capone , G. Sangiovanni , C. Castellani , C. Di Castro , M. Grilli