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相关论文: Orbital selective Mott transition in multi-band sy…

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We investigate the metal-insulator transition driven by the onsite repulsive interaction $U$ in an altermagnetic Hubbard model defined on a Lieb lattice. Using the slave-rotor approach at half filling, we find that the system exhibits a…

强关联电子 · 物理学 2026-05-29 Vanuildo S. de Carvalho , Hermann Freire , Rodrigo G. Pereira

In order to have a better understanding of ultrafast electrical control of exchange interactions in multi-orbital systems, we study a two-orbital Hubbard model at half filling under the action of a time-periodic electric field. Using…

强关联电子 · 物理学 2019-03-06 M. M. S. Barbeau , M. Eckstein , M. I. Katsnelson , J. H. Mentink

The mean-field theory with the use of the slave-boson functional method is generalized to take account of the spin- and orbital-ordered state in the doubly degenerate Hubbard model. Some numerical calculations are presented of the…

强关联电子 · 物理学 2007-05-23 Hideo Hasegawa

We study the interplay of crystal field splitting and Hund coupling in a two-orbital model which captures the essential physics of systems with two electrons or holes in the e_g shell. We use single site dynamical mean field theory with a…

强关联电子 · 物理学 2009-11-13 Philipp Werner , Andrew J. Millis

Within the framework of a realistic multi-band p-d-model, we derived an effective Hamiltonian to describe the exchange interaction effects near the spin crossover in magnetic Mott-Hubbard insulators under pressure. It is shown that…

强关联电子 · 物理学 2017-10-18 Alexander I. Nesterov , Yuri S. Orlov , Sergey G. Ovchinnikov , Sergey V. Nikolaev

At zero temperature, two-site dynamical mean field theory is applied to the Dynamic Hubbard model. The Dynamic Hubbard model describes the orbital relaxation that occurs when two electrons occupy the same site, by using a two-level boson…

强关联电子 · 物理学 2010-12-16 G. Bach , J. E. Hirsch , F. Marsiglio

We study the finite-temperature properties of the half-filled two-band Hubbard model in the presence of Hund's rule coupling and orbital anisotropy. We use the mean-field treatment of the $Z_2$ slave-spin theory with a finite-temperature…

强关联电子 · 物理学 2019-11-27 Alejandro Mezio , Ross H. McKenzie

We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…

强关联电子 · 物理学 2018-08-30 Caterina De Franco , Luca F. Tocchio , Federico Becca

We study transport properties of the half-filled two-dimensional (2D) Hubbard model with spatially varying interactions, where a pattern of interacting and non-interacting sites is formed. We use Determinantal Quantum Monte Carlo method to…

强关联电子 · 物理学 2014-08-15 Rubem Mondaini , Thereza Paiva

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

The two-orbital Hubbard model on a square lattice at quarter filling (electron number per site $n=1$) is investigated by the variational Monte Carlo method. For the variational wave function, we include short-range doublon-holon binding…

强关联电子 · 物理学 2021-02-16 Katsunori Kubo

The Mott transition is observed experimentally in materials that are magnetically frustrated so that long-range order does not hide the Mott transition at finite temperature. The Hubbard model on the triangular lattice at half-filling is a…

强关联电子 · 物理学 2023-04-03 P. -O. Downey , O. Gingras , J. Fournier , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

We study the electronic structure of cubic phase uranium dioxide at different volumes using a combination of density functional theory and dynamical mean-field theory. The \emph{ab initio} calculations predict an orbital-selective Mott…

强关联电子 · 物理学 2017-11-22 Li Huang , Yilin Wang , Philipp Werner

Mott insulators with both spin and orbital degeneracy are pertinent to a large number of transition metal oxides. The intertwined spin and orbital fluctuations can lead to rather exotic phases such as quantum spin-orbital liquids. Here we…

量子气体 · 物理学 2015-03-27 Zhenyu Zhou , Erhai Zhao , W. Vincent Liu

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…

A three band model containing the essential physics of transition metal oxides with partially filled t_2g shells is solved in the single-site dynamical mean field approximation, using the full rotationally invariant Slater-Kanamori…

强关联电子 · 物理学 2009-03-30 Philipp Werner , Emanuel Gull , Andrew J. Millis

Competition of crystal field splitting and Hund's rule coupling in magnetic metal-insulator transitions of half-filled two-orbital Hubbard model is investigated by multi-orbital slave-boson mean field theory. We show that with the increase…

强关联电子 · 物理学 2015-03-19 Ya-Min Quan , Liang-Jian Zou , Dayong Liu , Hai-Qing Lin

The Mott transition is usually considered as resulting from the divergence of the effective mass of the quasiparticle in the Fermi-liquid theory; the dispersion relation around the Fermi level is considered to become flat towards the Mott…

强关联电子 · 物理学 2020-10-26 Masanori Kohno

The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator…

强关联电子 · 物理学 2007-08-15 M. Civelli , M. Capone , S. S. Kancharla , O. Parcollet , G. Kotliar

In this work we study the two-orbital Hubbard model on a square lattice in the presence of hybridization between nearest-neighbor orbitals and a crystal-field splitting. We use a highly reliable numerical technique based on the density…

强关联电子 · 物理学 2021-01-15 Y. Nunez-Fernandez , K. Hallberg