中文
相关论文

相关论文: Orbital selective Mott transition in multi-band sy…

200 篇论文

Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures,…

强关联电子 · 物理学 2019-11-06 Heike Eisenlohr , Seung-Sup B. Lee , Matthias Vojta

Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…

强关联电子 · 物理学 2007-05-23 Tsuyoshi Kashima , Masatoshi Imada

We derive an effective classical model to describe the Mott transition of the half-filled one-band Hubbard model in the framework of the dynamical mean-field theory with hybridization expansion of the continuous time quantum Monte Carlo. We…

强关联电子 · 物理学 2020-02-19 Danqing Hu , Jian-Jun Dong , Li Huang , Lei Wang , Yi-feng Yang

We study the phase transition in Cu-substituted iron-based superconductors with a new developed real-space Green's function method. We find that Cu substitution has strong effect on the orbital-selective Mott transition introduced by the…

强关联电子 · 物理学 2016-07-08 Yang Liu , Yang-Yang Zhao , Yun Song

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

强关联电子 · 物理学 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

The orbital-selective Mott phase (OSMP) of multiorbital Hubbard models has been extensively analyzed before using static and dynamical mean-field approximations. In parallel, the properties of Block states (antiferromagnetically coupled…

强关联电子 · 物理学 2014-12-09 Julian Rincon , Adriana Moreo , Gonzalo Alvarez , Elbio Dagotto

Thermodynamic and dynamical properties of filling-control metal-insulator transition (MIT) in the Hubbard model are studied by the operator projection method, especially in two dimensions. This is a non-perturbative analytic approach to…

强关联电子 · 物理学 2009-11-07 Shigeki Onoda , Masatoshi Imada

We study the conductivity, density of states, and magnetic correlations of a two dimensional, two band fermion Hubbard model using determinant Quantum Monte Carlo (DQMC) simulations. We show that an orbitally selective Mott transition…

强关联电子 · 物理学 2010-04-22 Karim Bouadim , George G. Batrouni , Richard T. Scalettar

We examine the orbital and magnetic order of the two orbital Hubbard model within dynamical mean field theory. The model describes the low energy physics of a partially filled $e_g$-band as can be found in some transition metal compounds.…

强关联电子 · 物理学 2010-01-21 Robert Peters , Thomas Pruschke

The interaction-driven Mott transition in the half-filled Hubbard model is a first-order phase transition that terminates at a critical point $(T_\mathrm{c},U_\mathrm{c})$ in the temperature-interaction plane $T-U$. A number of crossovers…

强关联电子 · 物理学 2020-04-07 A. Reymbaut , M. Boulay , L. Fratino , P. Sémon , Wei Wu , G. Sordi , A. -M. S. Tremblay

Moir\'e super-potentials in two-dimensional materials allow unprecedented control of the ratio between kinetic and interaction energy. By this, they pave the way to study a wide variety of strongly correlated physics under a new light. In…

强关联电子 · 物理学 2022-01-03 Amir Dalal , Jonathan Ruhman

A simple slave-boson representation combined with the Hartree-Fock approximation for the Hund's rule coupling is introduced for a doubly degenerate narrow band, which bears a direct relation to that introduced previously in the…

强关联电子 · 物理学 2009-10-30 Andrzej Klejnberg , Jozef Spalek

Motivated by the debate of spin-density-wave (SDW) versus local-moment (LM) picture in the iron-based superconducting (FeSC) materials, we consider a two-band orbital-symmetric Hubbard model in which there is robust Fermi surface nesting at…

强关联电子 · 物理学 2015-03-18 Wing-Ho Ko , Patrick A. Lee

We investigate the properties of a two-orbital Hubbard model with unequal bandwidths on the square lattice in the framework of the dynamical cluster approximation (DCA) combined with a continuous-time quantum Monte Carlo (CT QMC) algorithm.…

强关联电子 · 物理学 2010-01-25 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti , Hartmut Monien

In this work, we study a slave-rotor mean-field theory of an extended Hubbard model, applicable to transition metal dichalcogenide moir\'e systems, that captures both the formation of Wigner crystals as well as exotic spin states on top of…

强关联电子 · 物理学 2025-07-10 Zhenhao Song , Urban F. P. Seifert , Zhu-Xi Luo , Leon Balents

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

We investigate the Hubbard model on the honeycomb lattice with intrinsic spin orbit interactions as a paradigm for two-dimensional topological band insulators in the presence of interactions. Applying a combination of Hartree-Fock theory,…

强关联电子 · 物理学 2015-03-13 Stephan Rachel , Karyn Le Hur

We investigate the Mott transition in a two-band Hubbard-Kanamori model using Dynamical Mean-Field Theory (DMFT) with the Density Matrix Renormalization Group (DMRG) and the Numerical Renormalization Group (NRG) as impurity solvers. Our…

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2007-05-23 Yasuo Ohashi , Yoshiaki Ōno

A generalized version of the fidelity susceptibility of single-band and multi-orbital Hubbard models is systematically studied using single-site dynamical mean-field theory in combination with a hybridization expansion continuous-time…

强关联电子 · 物理学 2016-12-08 Li Huang , Yilin Wang , Lei Wang , Philipp Werner