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相关论文: Orbital selective Mott transition in multi-band sy…

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Quantum phase transitions in metals are often accompanied by violations of Fermi liquid behavior in the quantum critical regime. Particularly fascinating are transitions beyond the Landau-Ginzburg-Wilson concept of a local order parameter.…

强关联电子 · 物理学 2010-10-01 Matthias Vojta

The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…

强关联电子 · 物理学 2025-10-20 Ankur Majumder , Sudeshna Sen

We investigate the Mott transitions in the multi-orbital Hubbard model at half-filling by means of the self-energy functional approach. The phase diagrams are obtained at finite temperatures for the Hubbard model with up to four-fold…

强关联电子 · 物理学 2009-11-11 Kensuke Inaba , Akihisa Koga , Sei-ichiro Suga , Norio Kawakami

We investigate the effects of crystal field splitting in a doped two-band Hubbard model with different bandwidths within dynamical mean-field theory (DMFT), using a quantum Monte Carlo impurity solver. In addition to an orbital-selective…

强关联电子 · 物理学 2013-05-30 E. Jakobi , N. Blümer , P. G. J. van Dongen

Based on the analysis of a two-orbital Hubbard model within a mean-field approach, we propose a mechanism for an orbital selective phase transition (OSPT) where coexistence of localized and itinerant electrons can be realized. We show that…

强关联电子 · 物理学 2012-01-31 Yu-Zhong Zhang , Hunpyo Lee , Hai-Qing Lin , Chang-Qin Wu , Harald O. Jeschke , Roser Valenti

We investigate the two-orbital Hubbard model in infinite dimensions by means of the self-energy functional method. By calculating the entropy, susceptibility, and quasi-particle weight at zero temperature, we determine the phase diagram for…

强关联电子 · 物理学 2007-05-23 Kensuke Inaba Akihisa Koga

We analyze the electronic properties of interacting crystal field split three band systems. Using a rotationally invariant slave boson approach we analyze the behavior of the electronic mass renormalization as a function of the intralevel…

强关联电子 · 物理学 2019-05-22 Jorge I. Facio , Pablo S. Cornaglia

Mechanisms of Mott transitions and dx2-y2-wave superconductivity (SC) are studied in the half-filled-band Hubbard model on square lattices with a diagonal hopping term (t'), using an optimization (or correlated) variational Monte Carlo…

强关联电子 · 物理学 2009-11-11 Hisatoshi Yokoyama , Masao Ogata , Yukio Tanaka

We provide analytical and numerical solution of the two band fermion model with on-site Coulomb at half filling. In limiting cases for generate bands and one flat band, the model reduces to the Hubbard and Falicov-Kimball models,…

强关联电子 · 物理学 2020-10-27 Igor N. Karnaukhov

The nondegenerate two-orbital Hubbard model is studied within the dynamic mean-field theory to reveal the influence of two important factors, i.e. crystal field splitting and interorbital hopping, on orbital selective Mott transition (OSMT)…

强关联电子 · 物理学 2009-11-06 Yun Song , Liang-Jian Zou

The superfluid-insulator transitions of the fermionic atoms in optical lattices are investigated by the two-site dynamical mean-field theory. It is shown that the Mott transition occurs as a result of the multiband effects. The…

其他凝聚态物理 · 物理学 2009-11-13 Takuji Higashiyama , Kensuke Inaba , Sei-ichiro Suga

Slave-spin mean-field theory, a light and accurate technique to model electronic correlations in Fermi-liquid phases of multi-orbital materials, is pedagogically exposed in this chapter, with a focus on its recent successful application to…

强关联电子 · 物理学 2017-06-14 Luca de' Medici , Massimo Capone

The metal-insulator and spin state transitions of CoO under high pressure are studied by using density functional theory combined with dynamical mean-field theory. Our calculations predict that the metal-insulator transition in CoO is a…

强关联电子 · 物理学 2014-12-04 Li Huang , Yilin Wang , Xi Dai

We study the non-equilibrium dynamics of a simple model for V2O3 that consists of a quarter-filled Hubbard model for two orbitals that are split by a weak crystal field. Peculiarities of this model are: (1) a Mott insulator whose gap…

强关联电子 · 物理学 2015-05-05 Matteo Sandri , Michele Fabrizio

We study two-component fermions in optical lattices with spatially alternating on-site interactions using dynamical mean-field theory. Calculating the quasi-particle weight, double occupancy, and order parameters for each sublattice, we…

强关联电子 · 物理学 2013-01-16 Akihisa Koga , Takamitsu Saitou , Atsushi Yamamoto

I investigate band and Mott insulating states in a two-band Hubbard model, with the aim of understanding the differences between the idealised one-orbital model and the more realistic multi-band case. Using a projection ansatz I show that…

强关联电子 · 物理学 2009-11-13 J. P. Hague

We describe the T=0 quantum phase transition in heavy fermion systems as an orbital selective Mott transition (OSMT) using a cluster extension of dynamical mean field theory. This transition is characterized by the emergence of a new…

强关联电子 · 物理学 2009-11-13 Lorenzo De Leo , Marcello Civelli , Gabriel Kotliar

Metal insulator transitions driven by local Coulomb interactions are among the most fascinating phenomena in condensed matter physics. They occur in a large variety of transition metal compounds. Most of these strongly correlated materials…

强关联电子 · 物理学 2007-05-23 A. Liebsch

We calculate the spectra and spin susceptibilities of a Hubbard model with two bands having different bandwidths but the same on-site interaction, with parameters close to the orbital-selective Mott transition, using dynamical mean-field…

强关联电子 · 物理学 2013-02-08 Markus Greger , Marcus Kollar , Dieter Vollhardt

The possibility of "orbitally selective Mott transitions" within a multiband Hubbard model, in which one orbital with large on-site electron-electron repulsion $U_1$ is insulating and another orbital, to which it is hybridized, with small…

强关联电子 · 物理学 2022-09-15 Yuxi Zhang , Chunhan Feng , Rubem Mondaini , George G. Batrouni , Richard T. Scalettar