中文
相关论文

相关论文: Orbital selective Mott transition in multi-band sy…

200 篇论文

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

We reinvestigate the bandwidth-control and doping-control Mott transitions (BCMT and DCMT) from a spin liquid Mott insulator to a Fermi liquid metal based on the slave-rotor representation of the Hubbard model,\cite{Florens} where the Mott…

强关联电子 · 物理学 2009-11-11 Ki-Seok Kim

We present evidence of strain-induced modulation of electron correlation effects and increased orbital anisotropy in the rutile phase of epitaxial VO$_2$/TiO$_2$ films from hard x-ray photoelectron spectroscopy and soft V L-edge x-ray…

We outline a general mechanism for Orbital-selective Mott transition (OSMT), the coexistence of both itinerant and localized conduction electrons, and show how it can take place in a wide range of realistic situations, even for bands of…

强关联电子 · 物理学 2009-03-24 Luca de' Medici , S. R. Hassan , Massimo Capone , Xi Dai

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson

We investigate the infinite-dimensional two-orbital Hubbard model at arbitrary band fillings. By means of the self-energy functional approach, we discuss the stability of the metallic state in the systems with same and different bandwidths.…

强关联电子 · 物理学 2009-11-13 Kensuke Inaba , Akihisa Koga

A U(1) slave-spin representation is introduced for multi-orbital Hubbard models. As with the $Z_2$ form of L. de'Medici et al. (Phys. Rev. B 72, 205124 (2005)), this approach represents a physical electron operator as the product of a slave…

强关联电子 · 物理学 2012-08-06 Rong Yu , Qimiao Si

The dynamical mean-field theory is employed to study the orbital-selective Mott transition (OSMT) of the two-orbital Hubbard model with nearest neighbor hopping and next-nearest neighbor (NNN) hopping. The NNN hopping breaks the…

强关联电子 · 物理学 2019-09-04 Yuekun Niu , Jian Sun , Yu Ni , Yun Song

The influence of short-range Coulomb correlations on the Mott transition in the single-band Hubbard model at half-filling is studied within cellular dynamical mean field theory for square and triangular lattices. Finite-temperature exact…

强关联电子 · 物理学 2009-11-13 A. Liebsch , H. Ishida , J. Merino

We study the ground state of the Hubbard model on a square lattice with two degenerate orbitals per site and at integer fillings as a function of onsite Hubbard repulsion $U$ and Hund's intra-atomic exchange coupling $J$. We use a…

强关联电子 · 物理学 2021-12-08 Arun Kumar Maurya , Md. Tahir Hossain Sarder , Amal Medhi

The orbital degrees of freedom are of vital importance in explanation of various phenomena. Among them is the orbital-selective Mott transition (OSMT), which is thought to occur in several materials as Ca$_{2-x}$Sr$_x$RuO$_4$ and…

强关联电子 · 物理学 2015-11-24 E Plekhanov , A Avella , F Mancini , F P Mancini

We report a quantum phase transition between orbital-selective Mott states, with different localized orbitals, in a Hund's metals model. Using the density matrix renormalization group, the phase diagram is constructed varying the electronic…

强关联电子 · 物理学 2014-12-09 Julian Rincon , Adriana Moreo , Gonzalo Alvarez , Elbio Dagotto

We use time-dependent non-equilibrium dynamical mean-field theory with weak-coupling auxiliary-field continuous time quantum Monte Carlo as an impurity solver to study the thermalization behavior of the mass-imbalanced single-band Hubbard…

强关联电子 · 物理学 2017-10-31 Liang Du , Li Huang , Gregory A. Fiete

Motivated by the unexplored complexity of phases present in the multiorbital Hubbard model, we analyze in this work the behavior of a degenerate two-orbital anisotropic Hubbard model at half filling where both orbitals have equal bandwidths…

强关联电子 · 物理学 2015-05-20 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti

We review theoretical investigations on the origin of the orbital selective phase where localized and itinerant electrons coexist in the d shell at intermediate strength of the on-site Coulomb interactions between electrons. In particular,…

强关联电子 · 物理学 2014-03-10 Yao Yao , Yu-Zhong Zhang , Hunpyo Lee , Harald O. Jeschke , Roser Valenti , Hai-Qing Lin , Chang-Qin Wu

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others…

强关联电子 · 物理学 2016-01-12 Yilin Wang , Li Huang , Liang Du , Xi Dai

We study the effects of interorbital hopping on orbital fluctuations and Mott-Hubbard metal-insulator transition (MIT) in the two-orbital Hubbard model within the extended linearized dynamical mean-field theory. By mapping the model onto an…

强关联电子 · 物理学 2009-11-11 Yun Song , Liang-Jian Zou

We analyze the nature of Mott metal-insulator transition in multiorbital systems using dynamical mean-field theory (DMFT). The auxiliary multiorbital quantum impurity problem is solved using continuous time quantum Monte Carlo (CTQMC) and…

强关联电子 · 物理学 2017-02-22 Jorge I. Facio , V. Vildosola , D. J. García , Pablo S. Cornaglia

We study analytically the Mott transition of the N-orbital Hubbard model using dynamical mean-field theory and a low-energy projection onto an effective Kondo model. It is demonstrated that the critical interaction at which the insulator…

强关联电子 · 物理学 2009-11-07 S. Florens , A. Georges , G. Kotliar , O. Parcollet

We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an inter-orbital hopping (inter-band hybridization). Both terms are relevant to the realistic…

强关联电子 · 物理学 2008-07-28 Alexander I. Poteryaev , Michel Ferrero , Antoine Georges , Olivier Parcollet