相关论文: Ballistic anisotropic magnetoresistance
In conventional metals, electronic transport in a magnetic field is characterized by the motion of electrons along orbits on the Fermi surface, which usually causes an increase in the resistivity through averaging over velocities. Here we…
Low density two-dimensional electron gases (2DEGs) with spin-orbit coupling are highly sensitive to an in-plane magnetic field, which impacts their Fermi surfaces and transport properties. Such 2DEGs, formed at transition metal oxide…
We report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. The Hall data reveals electron-type carriers and a mobility mu(5K) =1500cm2/Vs. The temperature dependence of…
We propose a model ferromagnet based on the Dirac Hamiltonian in three spatial dimensions, and study its transport properties which include anisotropic magnetoresistance (AMR) and anomalous Hall (AH) effect. This relativistic extension…
We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin (Ga,Mn)As epilayer with lateral nanoconstrictions. The observation establishes the generic nature of this effect, which originates from the spin-orbit coupling in a…
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2],…
A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn$_2$Bi$_2$ when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular…
We report the discovery of a novel giant magnetoresistance (GMR) phenomenon in a family of BaMn$_{2}$Pn$_{2}$ antiferromagnets (Pn stands for P, As, Sb, and Bi) with a parity-time symmetry. The resistivities of these materials are reduced…
We derive the general expression of the anisotropic magnetoresistance (AMR) ratio of ferromagnets for a relative angle between the magnetization direction and the current direction. We here use the two-current model for a system consisting…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using…
Linear magnetoresistance is a phenomenon that has been observed in a few topological compounds that originate from classical and quantum phenomena. Here, we performed electrical transport measurements, in zero and applied magnetic fields,…
Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction…
Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe…
When a nanoribbon is bent under a homogeneous external magnetic field, the effective magnetic field inside becomes either homogeneous or inhomogeneous, depending on the direction of the field. This enables the selective creation of bulk,…
For anisotropic magneto-resistance (AMR) effect, its value synergistically depends on the magnitudes of magneto-resistance (MR) and magneto-crystalline anisotropy energy (MAE) simultaneously. In a magnetic material, the concurrence of…
We develop a theory to compute the domain-wall magnetoresistance (DWMR) in antiferromagnetic (AFM) metals with different spin structures. In the diffusive transport regime, the DWMR can be either {\it negative} or positive depending on the…
We predict unidirectional magnetoresistance effects arising in a bilayer composed of a nonmagnetic metal and a ferromagnetic insulator, whereby both longitudinal and transverse resistances vary when the direction of the applied electric…
We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and…
How to realize applicably appreciated functionalities based on the coupling between charge and spin degrees of freedom is still a challenge in the field of spintronics. For example, anisotropic magnetoresistance (AMR) effect is utilized to…