相关论文: Weak Localization Thickness Measurements of Si:P D…
We present a non-destructive, spatially resolved thickness characterization method for rhombohedral (3R) molybdenum disulfide (MoS$_2$) on polydimethylsiloxane (PDMS) substrates. Unlike broadband spectroscopic approaches, the proposed…
DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…
This manuscript presents a novel method for characterizing the permittivities of low-loss dielectric slabs in sub-terahertz (sub-THz) frequencies, specifically above 100 GHz using a quasi-optical system. The algorithm is introduced with…
We report the observation in the direct space of the transport of a few thousand charges submitted to a tunable electric field along the surface of a silicon oxide layer. Charges are both deposited and observed using the same Electrostatic…
In $e$-beam evaporated amorphous silicon ($a$-Si), the densities of two-level systems (TLS), $n_{0}$ and $\overline{P}$, determined from specific heat $C$ and internal friction $Q^{-1}$ measurements, respectively, have been shown to vary by…
The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as…
The strength of light-matter interaction is of central importance in photonics and optoelectronics. For many widely studied two-dimensional semiconductors, such as MoS2, the optical absorption due to exciton resonances increases with…
Graphene has opened new avenues of research in quantum transport, with potential applications for coherent electronics. Coherent transport depends sensitively on scattering from microscopic disorder present in graphene samples: electron…
The statistical power of weak lensing measurements is principally driven by the number of high redshift galaxies whose shapes are resolved. Conventional wisdom and physical intuition suggest this is optimised by deep imaging at long (red or…
Searches for magnetic fields in white dwarfs have clarified both the frequency of occurrence and the global structure of the fields found down to field strengths of the order of 500 kG. Below this level, the situation is still very unclear.…
A surface distribution of the electroluminescence intensity of silicon p-n light emitting diodes is obtained under space scanning experiments at room temperature. An emitting surface of the diodes, represented by a few small bright emitting…
The real-time, in-line analysis of light polarization is critical in optical communication networks, which suffers from the complex systems with numerous bulky opto-electro-mechanical elements tandemly arranged along optical path. Here, we…
In this study we investigate the functional behavior of the intensity in high-angle annular dark field (HAADF) scanning transmission electron micrograph (STEM) images. The model material is a silica particle (20 nm) gel at 5 wt%. By…
We spectroscopically measure multiple hydrogen Balmer line profiles from laboratory plasmas to investigate the theoretical line profiles used in white dwarf atmosphere models. X-ray radiation produced at the Z Pulsed Power Facility at…
The electron density is a key parameter to characterize any plasma. Most of the plasma applications and research in the area of low-temperature plasmas (LTPs) are based on the accurate estimations of plasma density and plasma temperature.…
We investigate the electronic structure of gap and band tail states in amorphous silicon. Starting with two 216-atom models of amorphous silicon with defect concentration close to the experiments, we systematically study the dependence of…
Weak lensing is commonly measured using shear through galaxy ellipticities, or using the effect of magnification bias on galaxy number densities. Here, we report on the first detection of weak lensing magnification with a new, independent…
Fully energy-filtered X-ray photoelectron emission microscopy is used to analyze the spatial distribution of the silicon sub-oxide structure at the SiO2/Si interface as a function of underlying doping pattern. Using a spectroscopic…
The investigation of the mechanical loss of different silicon flexures in a temperature region from 5 to 300 K is presented. The flexures have been prepared by different fabrication techniques. A lowest mechanical loss of $3\times10^{-8}$…
Nonlinear frequency conversion provides an elegant method to detect photons in a spectral range which differs from the pump wavelength, making it highly attractive for photons with inherently low energy. Aside from the intensity of the…