相关论文: Single-dot spectroscopy via elastic single-electro…

Using far-infrared spectroscopy, we investigate the excitations of self-organized InAs quantum dots as a function of the electron number per dot, 1<n<6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode…

We create laterally large and low disorder quantum well based quantum dots to study single electron additions to two dimensional electron systems (2DES). Electrons tunnel into these dots across an AlGaAs tunnel barrier from a single $n+$…

Sequential single-electron charging is observed in InAs Self-Assembled Quantum Dots using capacitance spectroscopy. In this system, the Coulomb energy is smaller than the inter-level energy spacings due to the quantum confinement and both…

A theoretical study of single electron capacitance spectroscopy in quantum dots is presented. Exact diagonalizations and the unrestricted Hartree-Fock approximation have been used to shed light over some of the unresolved aspects. The…

Strong confinement of charges in few electron systems such as in atoms, molecules and quantum dots leads to a spectrum of discrete energy levels that are often shared by several degenerate quantum states. Since the electronic structure is…

We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment,…

We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the…

We study electron addition spectra of quantum dots in a broad range of electron occupancies starting from the first electron. Spectra for dots containing <200 electrons reveal a surprising feature. Electron additions are not evenly spaced…

We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant…

The many-particle ground state and excitations of self-assembled InAs quantum dots are investigated using far-infrared (FIR) and capacitance spectroscopy. The contributions of quantization and charging energies to the $n$--electron energy…

Using atomistic pseudopotential wave functions we calculate the electron and hole charging energies of InAs quantum dots. We find that the charging energies depend strongly on the dielectric constant epsilon_out of the surrounding material,…

Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively…

Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were…

We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the…

We study optically single self-assembled quantum dots embedded within the wide quantum well of a mixed type quantum structure. We compare the steady state and pulsed photoluminescence spectra of these dots to those of previously studied…

We show that the addition spectra of semiconductor quantum dots in the presence of magnetic field can be studied through a theoretical scheme that allows an accurate and practical treatment of the single particle states and…

Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We…

The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell…

Excitonic spectra are calculated for free-standing, surface passivated InAs quantum dots using atomic pseudopotentials for the single-particle states and screened Coulomb interactions for the two-body terms. We present an analysis of the…

We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe…