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We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential $\Delta$, the so-called ionic Hubbard model, using cluster dynamical mean field theory. We…
We investigate the ground state phase diagram of the half-filled $t-t^{\prime}$ repulsive Hubbard model in the presence of a staggered ionic potential $\Delta$, using the continuum-limit bosonization approach. We find, that with increasing…
We study the ground state of the Hubbard model on a square lattice with two degenerate orbitals per site and at integer fillings as a function of onsite Hubbard repulsion $U$ and Hund's intra-atomic exchange coupling $J$. We use a…
We employ a field-theoretical approach to analyze the Bose-Hubbard model on a lattice, with a focus on the low-energy properties across the Mott insulator (MI) to superfluid (SF) transition. Prior approaches approximated the partition…
A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…
We study the quantum phase transition between a band (``ionic'') insulator and a Mott-Hubbard insulator, realized at a critical value U=Uc in a bipartite Hubbard model with two inequivalent sites, whose on-site energies differ by an offset…
The effect of on-site electron-electron repulsion $U$ in a band insulator is explored for a bilayer Hubbard Hamiltonian with opposite sign hopping in the two sheets. The ground state phase diagram is determined at half-filling in the plane…
The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a…
We report a systematic study of the transition from a band insulator (BI) to a Mott insulator (MI) in a one-dimensional Hubbard model at half-filling with an on-site Coulomb interaction U and an alternating periodic site potential V. We…
We investigate the neutral-to-ionic insulator-insulator transition in one-dimensional materials by treating a strong-coupling effective model based on the ionic Hubbard model using the density-matrix renormalization group and finite-size…
The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…
The question if a Mott insulator and a band insulator are fundamentally different has been the matter of intensive research recently. Here we consider a simple model which allows by tuning one parameter to go continously from a Mott…
We study the quantum phase transition from an insulator to a metal realized at t'=t'_c > 0.5t in the ground state of the half-filled Hubbard chain with both nearest-neighbor (t) and next-nearest-neighbor (t') hopping. The study is carried…
The ground state of the Hubbard model is studied within the single-site approximation (SSA) and beyond the SSA. Within the SSA, the ground state is a typical Mott insulator at the critical point n=1 and U/W=+infty, with n being the electron…
We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…
We consider the possibility that the electrons injected into organic field-effect transistors are strongly correlated. A single layer of acenes can be modelled by a Hubbard Hamiltonian similar to that used for the kappa-(BEDT-TTF)(2)X…
Unconventional phases often occur where two competing mechanisms compensate. An excellent example is the ionic Hubbard model where the alternating local potential $\delta$, favoring a band insulator (BI), competes with the local repulsion…
We describe a general method to study the ground state phase diagram of electronic models on chains whose extended Hubbard hamiltonian is formed by a generalized permutator plus a band-controlling term. The method, based on the appropriate…
In the ionic Hubbard model, the onsite repulsion $U$, which drives a Mott insulator and the ionic potential $V$, which drives a band insulator, compete with each other to open up a window of charge fluctuations when $U \sim V$. We study…
We demonstrate, using dynamical mean-field theory with the hybridization expansion continuous time quantum montecarlo impurity solver, a rich phase diagram with {\em correlation driven metallic and half-metallic phases} in a simple model of…