相关论文: Magnetization relaxation in (Ga,Mn)As ferromagneti…
A microscopic Hamiltonian for interacting manganese impurities in diluted magnetic semiconductors (DMS) is derived. It is shown that in p -type III-V DMS the indirect exchange between Mn impurities has similarities with the Zener mechanism…
By using first-principles electronic structure calculations, we have studied the magnetic interactions in a proposed BaZn$_2$P$_2$-based diluted magnetic semiconductor (DMS). For a typical compound Ba(Zn$_{0.944}$Mn$_{0.056}$)$_2$P$_2$ with…
We present a detailed study of the magnetic properties of low-temperature-molecular-beam-epitaxy grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge_{1-x}Mn_{x}, with freezing temperatures of…
Recently K. Kavokin [Phys. Rev. B 64, 075305 (2001)] suggested that the Dzyaloshinskii-Moriya interaction between localized electrons governs slow spin relaxation in $n$-doped GaAs in the regime close to the metal-insulator transition. We…
An essential property of magnetic devices is the relaxation rate in magnetic switching which strongly depends on the energy dissipation and magnetic inertia of the magnetization dynamics. Both parameters are commonly taken as a…
A systematic experimental study of Gilbert damping is performed via ferromagnetic resonance for the disordered crystalline binary 3d transition metal alloys Ni-Co, Ni-Fe and Co-Fe over the full range of alloy compositions. After accounting…
The spin relaxation time $T_{1}$ in zinc blende GaN quantum dot is investigated for different magnetic field, well width and quantum dot diameter. The spin relaxation caused by the two most important spin relaxation mechanisms in zinc…
We report magnetization, susceptibility, electrical transport, and electron spin resonance (ESR) studies of single crystals of beta-AgNpO2(SeO3). Here the valence of the Np sites is expected to be Np(V). We observe a magnetic transition…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each…
Manifestations of quantum interference effects in macroscopic objects are rare. Weak localization is one of the few examples of such effects showing up in the electron transport through solid state. Here we show that weak localization…
We present a comprehensive derivation of the magnetization relaxation in a Mn12-acetate crystal based on thermally assisted spin tunneling induced by quartic anisotropy and weak transverse magnetic fields. The overall relaxation rate as…
The magnetic properties and magnetization dynamics of polycrystalline ultra-thin Co layers were investigated using a broadband ferromagnetic resonance (FMR) technique at room temperature. A variable thickness (1 nm $\leq t \leq$ 10 nm) Co…
Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well.…
In a diluted magnetic semiconductor system, the exchange interaction between magnetic impurities has two independent components: a direct antiferromagnetic interaction and a ferromagnetic interaction mediated by charge carriers. Depending…
Spin relaxation between the two lowest-lying spin-states has been studied in the S=4 single molecule magnet Ni$_4$ under steady state conditions of low amplitude and continuous microwave irradiation. The relaxation rate was determined as a…
Magnetic semiconductors have aroused interest due to their various functionalities related to spintronic devices. Manganese (Mn) as a substitutional impurity in A3B5 semiconductors supplies not only holes, but also localized spins. The…
The real-time dynamics of local magnetic moments exchange coupled to a metallic system of conduction electrons is subject to dissipative friction even in the absence of spin-orbit coupling. Phenomenologically, this is usually described by a…
We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M,…
Magnetic damping has a significant impact on the performance of various magnetic and spintronic devices, making it a long-standing focus of research. The strength of magnetic damping is usually quantified by the Gilbert damping constant in…
We discuss the rate of relaxation of the total spin in the two-electron droplet in the vicinity of the magnetic field driven singlet-triplet transition. The total spin relaxation is attributed to spin-orbit and electron-phonon interactions.…