相关论文: Magnetization relaxation in (Ga,Mn)As ferromagneti…

We have investigated the interplay between the metal-insulator transition and ferromagnetism in $({\rm III}_{1-x},{\rm Mn}_x){\rm V}$ ferromagnetic semiconductors. Our study is based on a model in which $S=5/2$ Mn local moments are…

We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaP, GaAs and GaSb, keeping the transition metal impurity fixed.…

We propose a theoretical model of magnetization switching in a ferromagnetic multilayer by both electric current and microwaves. The electric current gives a spin transfer torque on the magnetization, while the microwaves induce a…

A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…

Magnetization switching in ferromagnetic structures is an important process for technical applications such as data storage in spintronics, and therefore the determination of the corresponding switching rates becomes essential. We…

Iron gallium (FeGa) alloys are excellent rare-earth-free magnetostrictors. Through epitaxial stabilization, the disordered A2 alloy can be extended from 19% to 30% gallium resulting in a magnetostrictive coefficient almost twice than that…

The Landau-Lifshitz-Gilbert damping coefficient employed in the analysis of spin wave ferromagnetic resonance is related to the electrical conductivity of the sample. The changing magnetization (with time) radiates electromagnetic fields.…

We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this diluted magnetic semiconductor. The…

Spin angular momentum transfer in magnetic bilayers offers the possibility of ultrafast and low-loss operation for next-generation spintronic devices. We report the field- and temperature- dependent measurements on the magnetization…

The magnetic relaxation of ferromagnetic powders has been studied for many years, largely due to its importance to recording technologies. However, only recently have experiments been performed that resolve the magnetic state of individual…

We use muon spin relaxation (muSR) to investigate the magnetic properties of a bulk form diluted ferromagnetic semiconductor (DFS) Li1.15(Zn0.9Mn0.1)P with T_C ~ 22 K. MuSR results confirm the gradual development of ferromagnetic ordering…

We report on a study of Gilbert damping due to particle-hole pair excitations in conducting ferromagnets. We focus on a toy two-band model and on a four-band spherical model which provides an approximate description of ferromagnetic…

We investigate the Gilbert damping parameter for rare earth (RE)-transition metal (TM) ferrimagnets over a wide temperature range. Extracted from the field-driven magnetic domain-wall mobility, the Gilbert damping parameter was as low as…

We examine the Mn concentration dependence of the electronic and magnetic properties of optimally annealed Ga1-xMnxAs epilayers for 1.35% < x < 8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn…

We present a microscopic theory of the long-wavelength magnetic properties of the ferromagnetic diluted magnetic semiconductor (Ga,Mn)As. Details of the host semiconductor band structure, described by a six-band Kohn-Luttinger Hamiltonian,…

We report on microwave photovoltage and simultaneous magnetotransport measurements in a (Ga,Mn)As film oriented normal to the magnetic field. We detect the ferromagnetic resonance over a broad frequency range of 2 GHz to 18.5 GHz and…

We have measured the size effect in nonlocal Gilbert relaxation rate in FM(t$_{FM}$) / Cu (5nm) [/ Pt (2nm)] / Al(2nm) heterostructures, FM = \{ Ni$_{81}$Fe$_{19}$, Co$_{60}$Fe$_{20}$B$_{20}$, pure Co\}. Common behavior is observed for…

We show that the spin pumping from ferromagnetic insulator into the adjacent metallic spin sink can be strongly stimulated by the superconducting correlations. The key physical mechanism responsible for this effect is the presence of…

The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based…

We study two reciprocal thermal effects in the ferromagnetic semiconductor (Ga,Mn)As by scattering theory: domain wall motion induced by a temperature gradient as well as heat currents pumped by a moving domain wall. The effective…