相关论文: Magnetic bipolar transistor

Tendency to bifurcate can often be utilized to improve performance characteristics of amplifiers or even to build detectors. Bloch oscillating transistor is such a device. Here we show that bistable behaviour can be approached by tuning the…

Current-induced magnetic switching of a single magnetic molecule attached to two ferromagnetic contacts is considered theoretically, with the main emphasis put on the role of intrinsic spin relaxation processes. It is shown that…

We establish a general formalism of the bulk spin polarization (BSP) and the current-based spin polarization (CSP) for mesoscopic ferromagnetic and spin-orbit interaction (SOI) semiconducting systems. Based on this formalism, we reveal the…

Magnetic analogue of electronic gates are advantageous in many ways. There is no electron leakage, higher switching speed and more energy saving in a magnetic logic device compared to a semiconductor one. Recently, we proposed a magnetic…

A new proposal is given to design a spin half-adder in a nano-junction. It is well known that at finite voltage a net circulating current (known as circular current) appears within a mesoscopic ring under asymmetric ring-to-electrode…

Thermal management has become a promising field in recent years due to the limitation of energy resources and the global warming. An important topic in improving the efficiency of thermal energy utilization is how to control the flows of…

Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large…

We define the metamagnetic phase transition of itinerant electrons controlled by the spin injection mechanism. The current flow between a ferromagnetic metal and a metamagnetic metal produces the non-equilibrium shift of chemical potential…

Altermagnets are a novel class of materials that combine antiferromagnetic spin ordering with non-relativistic spin splitting (NRSS) in their band structure, making them promising candidates for spintronics applications without requiring…

The magnetic spin Hall effect is a time-reversal-odd phenomenon in which spin current is induced by the charge current. In the presence of a spin-orbit coupling and/or noncolinear magnetism, however, spin current is not uniquely defined.…

A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to…

A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching is analyzed of the layers by a magnetic field perpendicular to the initial magnetizations. In such a situation,…

Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn$^{2+}$ ions located outside the ferromagnetically-ordered regions when the system is below…

Three-dimensional topological insulators protected by both the time reversal (TR) and mirror symmetries were recently predicted and observed. Two-dimensional materials featuring this property and their potential for device applications have…

The mechanical behavior of magnetoelectric transducers consisting of piezoelectric-magnetostrictive bilayers has been modeled. The effect of the aspect ratio of the transducer as well as the influence of non-active surrounding layers has…

For the study of molecular spin junctions, we take into account two types of couplings between the molecule and the metal leads: (i) electron transfer that gives rise to net current in the biased junction and (ii) energy transfer between…

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…

We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…

We theoretically investigate the effective exchange interaction, $J_\mathrm{eff}$, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the…

Strongly nonlinear transport through Diluted Magnetic Semiconductor multiquantum wells occurs due to the interplay between confinement, Coulomb and exchange interaction. Nonlinear effects include the appearance of spin polarized stationary…