Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach
介观与纳米尺度物理
2007-05-23 v1 材料科学
摘要
Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large magnetized current is extracted. Therefore spin gain of more than 1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via Semiconductor Bloch Equations.
引用
@article{arxiv.cond-mat/0312243,
title = {Spin Gain Transistor in Ferromagnetic Semiconductors: the Semiconductor Bloch Equations Approach},
author = {Dmitri E. Nikonov and George I. Bourianoff},
journal= {arXiv preprint arXiv:cond-mat/0312243},
year = {2007}
}
备注
34 pages, PDF file