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相关论文: Structural Studies on Semiconducting Hydrogenated …

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We have studied the effects of oxygen on hydrogenated amorphous/crystalline silicon films in terms of their structural and optical properties. Different hydrogenated silicon oxide (SiO:H) and silicon (Si:H) films are fabricated between…

材料科学 · 物理学 2021-03-17 Meenakshi Rana , Chandan Banerjee , Papia Chowdhury

The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen…

材料科学 · 物理学 2007-05-23 A. Barhdadi , M. Chafik El Idrissi

Peculiarities of formation of inclusions of amorphous Si (a-Si) phase in Si-rich Si oxynitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are studied by combined Raman scattering and infrared (IR) absorption…

材料科学 · 物理学 2026-01-21 M. V. Voitovych , A. Sarikov , V. O. Yukhymchuk , V. V. Voitovych , M. O. Semenenko

We deposit intrinsic hydrogenated amorphous silicon (a-Si:H) thin films by reactive pulsed laser deposition, for various hydrogen pressures in the 0-20 Pa range, at a low deposition temperature of 120C, and investigate the hydrogen…

材料科学 · 物理学 2017-04-17 A. Mellos , M. Kandyla , D. Palles , M. Kompitsas

We present a first-principles study of the structural, electronic, and optical properties of hydrogenated amorphous silicon (a-Si:H). To this end, atomic configurations of a-Si:H with 72 and 576 atoms respectively are generated using…

材料科学 · 物理学 2017-03-31 Philippe Czaja , Urs Aeberhard , Massimo Celino , Simone Giusepponi , Michele Gusso

The results of RHEED, FTIR and Raman spectroscopy study of silicon and germanium films with the thickness up to 200 nm grown from molecular beams on dielectric Si$_3$N$_4$/SiO$_2$/Si(001) substrates are presented. Noticeable changes of the…

The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of…

材料科学 · 物理学 2020-11-04 Eike Gericke , Jimmy Melskens , Robert Wendt , Markus Wollgarten , Armin Hoell , Klaus Lips

The thermally-induced structural evolution of silicon- and oxygen-containing hydrogenated amorphous carbon (a-C:H:Si:O) was investigated by X-ray photoelectron and absorption spectroscopy, as well as molecular dynamics (MD) simulations. The…

A high quality amorphous silicon (a-Si) nanostructures has grown experimentally to study the origin of light emission and the quantum confinement effect in a-Si. The quantum confinement effect increases the band gap of material as the size…

材料科学 · 物理学 2016-08-09 K. M. Liu , Setianto

We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates…

无序系统与神经网络 · 物理学 2009-10-30 Thorsten Koslowski , Walter Kob , Katharina Vollmayr

Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…

We report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the E'-alpha point defect in amorphous silicon dioxide (a-SiO2). This defect has been studied in beta-ray irradiated and…

材料科学 · 物理学 2008-05-15 G. Buscarino , R. Boscaino , S. Agnello , F. M. Gelardi

This paper presents a large-scale $ab$ $initio$ simulation study of amorphous silicon hydride ($a$-Si$_{\text{1-x}}$H$_{\text{x}}$) with an emphasis on the structure and properties of the material across a range of hydrogen concentration by…

材料科学 · 物理学 2023-09-19 Raymond Atta-Fynn , Somilkumar J. Rathi , Harsh Arya , Parthapratim Biswas

Classical molecular-dynamics simulations have been carried out to investigate densification mechanisms in silicon dioxide thin films deposited on an amorphous silica surface, according to a simplified ion-beam assisted deposition (IBAD)…

材料科学 · 物理学 2009-11-07 Alexis Lefevre , Laurent J. Lewis , Ludvik Martinu , Michael R. Wertheimer

The dielectric properties of noncrystalline hafnium silicon oxynitride (HfSiON) films with a variety of atomic compositions were investigated. The films were deposited by reactive sputtering of Hf and Si in an O, N, and Ar mixture ambient.…

We study optical properties of two dimensional silicene using density functional theory based calculations. Our results on optical response property calculations show that they strongly depend on direction of polarization of light, hence…

介观与纳米尺度物理 · 物理学 2012-05-24 Kamal Chinnathambi , Aparna Chakrabarti , Arup Banerjee , S. K. Deb

We present new atomistic models of amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) surfaces. The a-Si model included 4096 atoms and was obtained using local orbital density functional theory. By analyzing a slab model…

材料科学 · 物理学 2025-06-24 Kishor Nepal , Aashish Gautam , Chinonso Ugwumadu , David Drabold

Isolated oxygen impurities and fully oxidized structures of four stable two-dimensional (2D) SiS structures are investigated by {\em ab initio} density functional calculations. Binding energies of oxygen impurities for all the four 2D SiS…

材料科学 · 物理学 2019-04-23 Zhengnan Li , Shuai Dong , Jie Guan

The sample dependence of various properties of hydrogenated amorphous silicon ($a$-Si:H) have been studied with 216 silicon atoms and 24 hydrogen atoms using the density functional based tight binding molecular dynamics simulations. The…

其他凝聚态物理 · 物理学 2009-11-10 Ranber Singh , S. Prakash , Nitya Nath Shukla , R. Prasad

We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show…

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