相关论文: Split-off dimer defects on the Si(001)2x1 surface
Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers are of particular interest for detection and response to…
A twin boundary (TB) is a common low energy planar defect in crystals including those with the atomic diamond structure (C, Si, Ge, etc.). We study twins in a self-assembled soft matter block copolymer (BCP) supramolecular crystal having…
We propose and experimentally demonstrate a novel interference fading suppression method for phase-sensitive optical time domain reflectometry (Phi-OTDR) using space-division multiplexed (SDM) pulse probes in few-mode fiber. The SDM probes…
The fundamental O-D stretch region (2600 - 2800 cm-1) of the fully deuterated water dimer, (D2O)2, is studied using a pulsed supersonic slit jet source and a tunable optical parametric oscillator source. Relatively high spectral resolution…
Understanding how atomic defects shape the nanoscale optical properties of two-dimensional (2D) semiconductors is essential for advancing quantum technologies and optoelectronics. Using scanning tunneling spectroscopy (STS) and luminescence…
Superconducting metal dichalcogenides (MDCs) present several similarities to the other layered superconductors like cuprates. The superconductivity in atomically thin MDCs has been demonstrated by recent experiments, however, the…
Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively…
The rutile TiO$_2$ (110) surface reduced by the bridging oxygen vacancy, bridging hydroxyl group or Ti interstitial atom has been investigated by calculating their electronic structures using the density functional theory plus U method. It…
We report a de Haas-van Alphen (dHvA) oscillation study on IrTe2 single crystals showing complex dimer formations. By comparing the angle dependence of dHvA oscillations with band structure calculations, we show distinct Fermi surface…
In this paper we present detailed study of the density of states near defects in Bi$_2$Se$_3$. In particular, we present data on the commonly found triangular defects in this system. While we do not find any measurable quasiparticle…
We present the results of low-temperature transport measurements on chains of superconductor--normal-constriction--superconductor (SNS) junctions fabricated on the basis of superconducting PtSi film. A comparative study of the properties of…
This paper presents a spectral survey of diffuse interstellar bands (DIBs) in the NIR range, from 0.9 to 2.5 micron. The observations were designed to detect new DIBs, confirm previously proposed NIR DIBs, and characterise their behaviour…
Vicinal surfaces of bismuth are unique test-beds for investigating one-dimensional (1D) spin-polarised surface states that may one day be used in spintronic devices. In this work, two such states have been observed for the (112) surface…
We study Bethe/gauge correspondence at the special locus of Coulomb moduli where the integrable system exhibits the splitting of degenerate levels. For this investigation, we consider the four-dimensional pure $\mathcal{N}=2$ supersymmetric…
Formation mechanisms of striations along the discharge channel of a single-filament dielectric barrier discharge (DBD) in argon at atmospheric pressure are investigated by means of a time-dependent, spatially two-dimensional fluid-Poisson…
It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies. Whereas on highly doped n-type substrates isolated DBs are…
Diamond's exceptional properties make it highly suited for applications in challenging radiation environments. Understanding radiation-induced damage in diamond is crucial for enabling its practical applications and advancing materials…
We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV$^-$) centers formed along the tracks of swift heavy ions (SHIs) in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during…
Break-junction tunneling spectroscopy at temperatures 30-50 mK in high magnetic field is used to directly probe the quasiparticle density of states within the energy gap in a single crystal Bi2212 high-$T_c$ superconductor. The measured…
Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defects are often placed in a nanostructured host or close to…