相关论文: On Effective Electron Mass of Silicon MOSFET at Lo…
We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons'…
We measure the effective mass in a dilute two-dimensional electron system in (111)-silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A strong enhancement of the effective mass…
We find that at intermediate temperatures, the metallic temperature dependence of the conductivity \sigma(T) of 2D electrons in silicon is described well by a recent interaction-based theory of Zala et al. (Phys. Rev. B 64, 214204 (2001)).…
Bound electron pairs formed due to the peculiarities of the band dispersion of electrons in crystals attract much interest because they can carry charge and spin even in the absence of band conductivity. However, such an important parameter…
We study the renormalization of the Fermi-liquid parameters in the vicinity of a density wave quantum phase transition, which should occur in MOSFET systems at low densities. First, using a perturbative RPA treatment of fluctuations, we…
The effective mass m*, and the Lande g-factor of the uniform 2-D electron fluid (2DEF) are calculated as a function of the spin polarization zeta, and the density parameter r_s, using a non-perturbative analytic approach. Our theory is in…
In this contribution we study the accuracy of various forms of electron effective mass equation in reproducing spectral and spin-related features of quantum dot systems. We compare the results of the standard 8 band k.p model to those…
In a recent Letter (PRL 88, 196404 (2002)), the effective g-factor and the effective mass have been studied by Pudalov et al. in a dilute 2D electron system in silicon. The authors contrast their data with the data obtained by our group…
We study a semi-classical Schr{\"o}dinger equation which describes the dynamics of an electron in a crystal in the presence of impurities. It is well-known that under suitable assumptions on the initial data, the wave function can be…
The effective mass approximation is widely used across models of carrier transport, optical response, and excitons in semiconductors and insulators, but its validity hinges on the assumption that the band dispersion $E_n(\mathbf{k})$ at the…
For the two-dimensional electron system in silicon MOSFET's, the scaled magnetoconductivity has been shown to exhibit critical behavior at finite density $n_0$. Analysis of these magnetotransport experiments yields a product $g^*m^*$ that…
Using the dynamical mean-field theory, we calculate the effective electron mass in the Hubbard model on a semi-infinite lattice. At the surface the effective mass is strongly enhanced. Near half-filling this gives rise to a…
We have accurately measured the effective mass in a dilute two-dimensional electron system in silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A sharp increase of the effective…
We review the existing and present the new results of $\bf kp$ calculations of the electron, hole, and exciton effective $g$-factors in semiconductor nanocrystals of different shape and symmetry. We propose a simple yet accurate method for…
This is a numerical study of quasiparticle localization in symmetry class \textit{BD} (realized, for example, in chiral \textit{p}-wave superconductors), by means of a staggered-fermion lattice model for two-dimensional Dirac fermions with…
The dark and bright solitons in different systems are already known in Klein-Gordon lattice. Instead of an external driving force, if the intrinsic field is only considered, then the modal dynamics for small oscillations could be…
The electronic band structure of cubic HfO2 is calculated using an it ab initio all-electron self--consistent linear augmented plane-wave method, within the framework of the local-density approximation and taking into account…
The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities,…
We calculate the quasiparticle effective mass for the electron gas in two and three dimensions in the metallic region. We employ the single particle scattering potential coming from the Sj\"{o}lander-Stott theory and enforce the Friedel sum…
The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron…